Abstract:Flexoelectricity is an electromechanical coupling effect between the polarization and strain gradient in all dielectrics regardless of point group symmetry. Due to its significant influence on material behavior at the nanoscale, the flexoelectric effect has attracted more and more attention in recent years. In this paper, a real space phase field model for the flexoelectric effect in ferroelectric materials is developed by using isogeometric analysis (IGA). The IGA employs the same smooth and high-order basis functions to describe both the geometry of material and the solution of phase field, which is able to give an accurate and efficient description of the flexoelectric effect in ferroelectrics with arbitrary geometrical shapes and boundary conditions. To this end, phase field simulations on the effect of flexoelectricity are conducted for nanoscale ferroelectrics with different geometrical shapes and boundary conditions. The simulation results show that the flexoelectric effect has significant influence on the domain structures and domain switching of ferroelectric materials at the nanoscale. For ferroelectric nanobeam under bending load, due to the flexoelectric effect, the mechanical bending can break the symmetry of hysteresis loop between electric field and polarization. As for ferroelectric nanodots, the flexoelectric effect increases the magnitude of spontaneous polarizations and results in the tilting of polarization vortex. In addition, out-of-plane components appear in the polarization vortex of ferroelectric nanodots due to the flexoelectric effect, which increases the coercive field for the switching of polarization vortex and changes the switching process significantly. The present work not only presents an effective nonlocal model for the domain evolution in ferroelectric materials with the consideration of the flexoelectric effect, but also asymmetric hysteresis loop between polarization and external electric field for ferroelectric beam, and new switching behavior of the polarization vortex in ferroelectric nanodots due to the flexoelectric effect.

Elimination of the confrontation between theory and experiment in flexoelectric Bi2GeO5

An Isogeometric Approach to Flexoelectric Effect in Ferroelectric Materials

Giant Piezoelectric Response in Piezoelectric/dielectric Superlattices Due to Flexoelectric Effect

Experimental studies of the converse flexoelectric effect induced by inhomogeneous electric field in a barium strontium titanate composition

A Phase-Field Simulation-Based Approach to Determine Flexoelectric Coefficients from Hysteresis Loop of Ferroelectrics

Flexoelectricity induced increase of critical thickness in epitaxial ferroelectric thin films

Giant Flexoelectricity in Bent Silicon Thinfilms

Verification of the flexoelectricity in barium strontium titanate through d33 meter

Giant Flexoelectric Coefficients at Critical Ferroelectric Transition

Advancements and Prospects of Flexoelectricity

Effects of flexoelectric polarization on surface potential of dielectric thin-film heterostructures: A comparative study

Flexoelectric Effect of Ferroelectric Materials and Its Applications

Giant Apparent Flexoelectricity in Semiconductors Driven by Insulator-to-metal Transition

Effect of Grain Size on Flexoelectricity

Flexo-phototronic Effect in Centro-symmetric BiVO4 Epitaxial Films

Flexoelectric Effect in Thin Films: Theory and Applications

Evaluating non-intrinsic contribution in flexoelectric measurements

Grain size effect of the flexoelectric response in BaTiO3 ceramics

Giant Flexoelectricity in Bent Semiconductor Thinfilm

Giant Polarization and Abnormal Flexural Deformation in Bent Freestanding Perovskite Oxides

Enhanced Polarization and Abnormal Flexural Deformation in Bent Freestanding Perovskite Oxides