Abstract:Many kinds of two-dimensional (2D) van der Waals (vdW) have been demonstrated to exhibit electromechanical coupling effects, which makes them promising candidates for next-generation devices, such as piezotronics and nanogenerators. Recently, flexoelectricity was found to account for the out-of-plane electromechanical coupling in many 2D transition metal dichalcogenides (TMDs) who only exhibit in-plane piezoelectricity. However, low dimensional vdW three-dimensional (3D) topological insulators (TIs) have been overlooked regarding their electromechanical properties. In this study, for the first time, we experimentally investigate the electromechanical coupling of low dimensional 3D TIs with a centrosymmetric crystal structure, where a binary compound, bismuth selenite (Bi2Se3), is taken as an example. The results of piezoresponse force microscope (PFM) tests on the Bi2Se3 nanoflakes show that the material exhibits both out-of-plane and in-plane electromechanical responses. The Bi2Se3 nanoflake with a thickness of 37 nm possesses an effective out-of-plane piezoelectric coefficient of ~0.65 pm V-1. With careful analyses, the electromechanical responses are verified to arise from the converse flexoelectricity. The measured effective out-of-plane piezoelectric coefficient is mainly contributed by flexoelectric coefficient, {\mu}_39, which is estimated to be approximately 0.13 nC m-1. However, it is rather difficult to obtain the in-plane component of the flexoelectric tensor from the in-plane PFM measurements since the direction of the in-plane stress is always not normal to the AFM cantilever axis. The results provide useful guidance for understanding the flexoelectric effect of low dimensional vdW materials with centrosymmetric crystal structures. Moreover, the work can pave to way to explore the electromechanical devices based on the flexoelectricity of vdW TIs.

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Verification of the flexoelectricity in barium strontium titanate through d33 meter

Flexoelectricity in barium strontium titanate thin film

Flexure Mode Flexoelectric Piezoelectric Composites

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Converse Flexoelectric Coefficient F1212 in Bulk Ba0.67Sr0.33TiO3

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Flexoelectric Sensing Using a Multilayered Barium Strontium Titanate Structure

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Converse flexoelectricity with relative permittivity gradient

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Measuring the Flexoelectric Coefficient of Bulk Barium Titanate from a Shock Wave Experiment

The flexoelectricity of barium and strontium titanates from first principles

Converse Flexoelectricity Around Ferroelectric Domain Walls

Compositional Heterogeneity Enhancing the Flexoelectric Response of BaTiO3 -Based Ceramics

Domain Engineering the Flexoelectric Response of BaTiO3–SrTiO3 Binary Films: A Phase Field Study

The Surface Mechanism for the Flexoelectric Response in Sodium Bismuth Titanate‐based Ferroelectric Ceramics

Improved flexoelectricity in PVDF/barium strontium titanate (BST) nanocomposites

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Converse Flexoelectricity of Low-Dimensional Bismuth Selenite (Bi2Se3) Revealed by Piezoresponse Force Microscopy (PFM)

Flexoelectricity in Compositionally Graded Ba1−xSrxTiO3 Ceramics