Strain fluctuations unlock ferroelectricity in wurtzites

Steven M. Baksa,Simon Gelin,Seda Oturak,Robert Jackson Spurling,Alireza Sepehrinezhad,Leonard Jacques,Susan E. Trolier-McKinstry,Adri C. T. van Duin,Jon-Paul Maria,Andrew M. Rappe,Ismaila Dabo

2024-07-12

Abstract:Ferroelectrics are of practical interest for non-volatile data storage due to their reorientable, crystallographically defined polarization. Yet efforts to integrate conventional ferroelectrics into ultrathin memories have been frustrated by film-thickness limitations, which impede polarization reversal under low applied voltage. Wurtzite materials, including magnesium-substituted zinc oxide (Zn,Mg)O, have been shown to exhibit scalable ferroelectricity as thin films. In this work, we explain the origins of ferroelectricity in (Zn,Mg)O, showing that large strain fluctuations emerge locally in (Zn,Mg)O and can reduce local barriers to ferroelectric switching by more than 40%. We provide concurrent experimental and computational evidence of these effects by demonstrating polarization switching in ZnO/(Zn,Mg)O/ZnO heterostructures featuring built-in interfacial strain gradients. These results open up an avenue to develop scalable ferroelectrics by controlling strain fluctuations atomistically.

Materials Science

What problem does this paper attempt to address?

The paper primarily explores how to achieve ferroelectricity in wurtzite structure materials, with a particular focus on the magnesium-doped zinc oxide ((Zn,Mg)O) system. The core issue of the research is to address the thickness limitation problem in traditional ferroelectric materials in ultra-thin states, which hinders the reversal of ferroelectricity at low voltages, thereby affecting their application in microelectronic memory devices.

Specifically, the paper addresses the following key issues:
1. **Origin of Ferroelectricity**: Through theoretical calculations and experimental validation, the paper reveals that in (Zn,Mg)O, the presence of local strain fluctuations can significantly lower the energy barrier for ferroelectric reversal, thereby achieving ferroelectricity.
2. **Role of Strain Fluctuations**: The study finds that in (Zn,Mg)O, the incorporation of magnesium ions leads to significant local strain fluctuations, which can reduce the energy barrier for ferroelectric reversal by more than 40%.
3. **Atomic-Scale Mechanism**: The paper uses first-principles calculations and machine learning methods to simulate the atomic-scale structural changes in (Zn,Mg)O, revealing how magnesium ions induce local strain fluctuations by altering the chemical bonding environment, thereby promoting the generation of ferroelectricity.
4. **Heterostructure Design**: The paper also demonstrates a method to control the interface strain gradient by designing ZnO/(Zn,Mg)O/ZnO heterostructures, which can further reduce the critical electric field required for ferroelectric reversal, achieving controllable induction of ferroelectricity.

In summary, this paper aims to provide theoretical basis and technical solutions for developing new scalable ferroelectric materials that can operate at lower voltages by understanding and controlling the local strain fluctuations induced by magnesium doping in (Zn,Mg)O.