Ferroelastic switching in a layered-perovskite thin film

Chuanshou Wang,Xiaoxing Ke,Jianjun Wang,Renrong Liang,Zhenlin Luo,Yu Tian,Di Yi,Qintong Zhang,Jing Wang,Xiu-Feng Han,Gustaaf Van Tendeloo,Long-Qing Chen,Ce-Wen Nan,Ramamoorthy Ramesh,Jinxing Zhang
DOI: https://doi.org/10.1038/ncomms10636
IF: 16.6
2016-01-01
Nature Communications
Abstract:A controllable ferroelastic switching in ferroelectric/multiferroic oxides is highly desirable due to the non-volatile strain and possible coupling between lattice and other order parameter in heterostructures. However, a substrate clamping usually inhibits their elastic deformation in thin films without micro/nano-patterned structure so that the integration of the non-volatile strain with thin film devices is challenging. Here, we report that reversible in-plane elastic switching with a non-volatile strain of approximately 0.4% can be achieved in layered-perovskite Bi 2 WO 6 thin films, where the ferroelectric polarization rotates by 90° within four in-plane preferred orientations. Phase-field simulation indicates that the energy barrier of ferroelastic switching in orthorhombic Bi 2 WO 6 film is ten times lower than the one in PbTiO 3 films, revealing the origin of the switching with negligible substrate constraint. The reversible control of the in-plane strain in this layered-perovskite thin film demonstrates a new pathway to integrate mechanical deformation with nanoscale electronic and/or magnetoelectronic applications.
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