Revealing the Microscopic Mechanism of Displacive Excitation of Coherent Phonons in a Bulk Rashba Semiconductor

Peter Fischer,Julian Baer,Moritz Cimander,Volker Wiechert,Oleg Tereshchenko,Davide Bossini

2024-10-10

Abstract:Changing the macroscopic properties of quantum materials by optically activating collective lattice excitations has recently become a major trend in solid state physics. One of the most commonly employed light-matter interaction routes is the displacive mechanism. However, the fundamental contribution to this process remains elusive, as the effects of free-carrier density modification and raised effective electronic temperature have not been disentangled yet. Here we use time-resolved pump-probe spectroscopy to address this issue in the Rashba semiconductor BiTeI. Exploring the conventional regime of electronic interband transitions for different excitation wavelengths as well as the barely accessed regime of electronic intraband transitions, we answer a long-standing open question regarding the displacive mechanism: the lattice modes are predominantly driven by the rise of the effective electronic temperature. In the intraband regime, which allows to increase the effective carrier temperature while leaving their density unaffected, the phonon coherence time does not display significant fluence-dependent variations. Our results thus reveal a pathway to displacive excitation of coherent phonons, free from additional scattering and dissipation mechanisms typically associated with an increase of the free-carrier density.

Mesoscale and Nanoscale Physics,Other Condensed Matter

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to reveal the microscopic mechanism of displacement - excited coherent phonons (DECP), especially to distinguish the contributions of the free - carrier density \(n_c\) and the effective electron temperature \(T_e\) to this process. Specifically, the author studied the effects of inter - band and intra - band electron transitions on the excitation of coherent phonons at different excitation wavelengths in the Rashba semiconductor BiTeI through time - resolved pump - probe spectroscopy.

### Main problems:
1. **Distinguishing the contributions of the free - carrier density \(n_c\) and the effective electron temperature \(T_e\)**:
- In traditional experiments, laser excitation usually increases the free - carrier density \(n_c\) and the effective electron temperature \(T_e\) simultaneously, so it is difficult to distinguish the specific contributions of these two factors to the excitation of coherent phonons.
- The author selectively uses mid - infrared laser pulses to excite electron intra - band transitions, thereby increasing only \(T_e\) without changing \(n_c\) to separate the contributions of the two.

2. **Verifying the main driving factors for the excitation of coherent phonons**:
- Research shows that in the case of intra - band transitions, even if the laser intensity is significantly increased (i.e., \(T_e\) is increased), the coherence time of coherent phonons does not change significantly, indicating that the increase in \(T_e\) is the main microscopic mechanism, rather than the increase in \(n_c\).

3. **Exploring the robustness of BiTeI materials at high - carrier densities**:
- Experiments have found that BiTeI can still maintain the coherence time of coherent phonons at an optically - doped carrier density as high as \(n_c\approx1\times 10^{21}\, \text{cm}^{-3}\), showing its superior performance in coherent phononics.

### Conclusion:
Through the above research, the author has successfully revealed that the main microscopic mechanism of displacement - excited coherent phonons is driven by the increase in the effective electron temperature \(T_e\), rather than the increase in the free - carrier density \(n_c\). In addition, the excellent performance of BiTeI materials at high - carrier densities also provides potential application prospects for future ultrafast optical technologies.