Abstract:The manipulation of the Rashba spin-splitting is crucial for the development of nanospintronic technology. Here, it is proposed that the Rashba spin-splitting can be turned on and off by reversing electric-field direction. By the first-principles calculations, our proposal is illustrated by a concrete example of Janus monolayer RbKNaBi. The designed RbKNaBi possesses dynamical, thermal, and mechanical stabilities, and is a large-gap quantum spin Hall insulator (QSHI) with Rashba spin-splitting near the Fermi level. A small built-in electric field is predicted due to very small electronegativity difference between the bottom and top atoms, which is very key to switch Rashba spin-splitting through the experimentally available electric field intensity. Due to out-of-plane structural asymmetry, the Janus monolayer has distinctive behaviors by applying external electric field E with the same magnitude but different directions ( z or −z ). Our results reveal that the Rashba energy ( ER ) and Rashba constant ( αR ) are increased by the positive E , while a negative E suppresses the Rashba splitting to disappear, and then appears again. In a certain E region (0.15 V/Å to 0.25 V/Å ), switching Rashba spin-splitting can be achieved by only reversing electric-field direction. Besides, the piezoelectric strain coefficients d11 and d31 (5.52 pm/V and –0.41 pm/V) are predicted, which are higher than or compared with those of many 2D materials. By piezoelectric effect, the strain can also be used to tune Rashba spin-splitting of RbKNaBi. In Janus RbKNaBi monolayer, the combination of piezoelectricity and Rashba spin-splitting with topological insulating phase can promote the integration of various physical phenomena. Moreover, a possible spintronic device is proposed to realize the function of spintronic switch. Our proposed manipulation of the Rashba spin-splitting may make a special contribution to semiconductor spintronics. https://doi.org/10.1103/PhysRevMaterials.7.044604 ©2023 American Physical Society

Dynamic Rashba-Dresselhaus Effect

Nonlinear Rashba Spin Splitting in Transition Metal Dichalcogenide Monolayers.

Effect of Electron-Electron Interactions on Rashba-like and Spin-Split Systems

Rashba-like physics in condensed matter

Revealing the Microscopic Mechanism of Displacive Excitation of Coherent Phonons in a Bulk Rashba Semiconductor

The two-dimensional Rashba-Holstein model

Bulk Rashba Effect in Multiferroics: a theoretical prediction for BiCoO3

Ultrafast Optical Control of Rashba Interactions in a TMDC Heterostructure

Rashba Splitting In Bilayer Transition Metal Dichalcogenides Controlled By Electronic Ferroelectricity

Band Splitting with Vanishing Spin Polarizations in Noncentrosymmetric Crystals.

Phonon-limited Mobility in Two-Dimensional Semiconductors with Spin-Orbit Coupling

Electron Interactions in Rashba Materials

Phonon-mediated spin transport in quantum paraelectric metals

Switching Rashba spin-splitting by reversing electric-field direction

Collinear Rashba-Edelstein effect in non-magnetic chiral materials

Persistent spin helix in Rashba-Dresselhaus ferroelectric CsBiNb2O7

Trembling Motion of Exciton Polaritons Close to the Rashba-Dresselhaus Regime

Rashba spin splitting-induced topological Hall effect in a Dirac semimetal-ferromagnetic semiconductor heterostructure

Polarization in a Rashba Strip Coupled with a Spiral Spin Density Wave.

Unidirectional Rashba Spin Splitting in Single Layer WS$_{2(1-x)}$Se$_{2x}$ alloy

Giant Rashba-like Spin–orbit Splitting with Distinct Spin Texture in Two-Dimensional Heterostructures*