Abstract:Laser-driven coherent phonons can act as modulated strain fields and modify the adiabatic ground state topology of quantum materials. Here we use time-dependent first-principles and effective model calculations to simulate the effect of the coherent phonon induced by strong terahertz electric field on electronic carriers in the topological insulator ZrTe$_5$. We show that a coherent $A_\text{1g}$ Raman mode modulation can effectively pump carriers across the band gap, even though the phonon energy is about an order of magnitude smaller than the equilibrium band gap. We reveal the microscopic mechanism of this effect which occurs via Landau-Zener-Stückelberg tunneling of Bloch electrons in a narrow region in the Brillouin zone center where the transient energy gap closes when the system switches from strong to weak topological insulator. The quantum dynamics simulation results are in excellent agreement with recent pump-probe experiments in ZrTe$_5$ at low temperature.

What problem does this paper attempt to address?

### What problems does this paper attempt to solve? This paper aims to study how coherent phonons driven by a strong terahertz (THz) electric field can induce carrier excitation in the topological insulator ZrTe₅. Specifically, the authors simulated the effect of coherent A₁g Raman mode modulation on electron carriers through time - dependent first - principles and effective model calculations. They attempt to reveal the microscopic mechanism behind this phenomenon and explain why carriers can still be effectively pumped across the band gap even when the phonon energy is much smaller than the equilibrium band gap. #### Main problems: 1. **Carrier pumping mechanism**: The paper explores how coherent phonons can close the transient energy gap in a small area near the center of the Brillouin zone through the Landau - Zener - Stückelberg (LZS) tunneling mechanism, thereby pumping carriers from the valence band to the conduction band. 2. **Consistency between experiment and theory**: The authors hope that the results of their quantum - dynamics simulations can be consistent with the results of the recently conducted pump - probe experiments at low temperatures, especially in the phenomenon of the continuously increasing electron carrier density observed. 3. **Influence of topological phase transition**: The study also focuses on the influence of the band - gap closing on the carrier - pumping process during the dynamic transition of the system from a strong topological insulator (STI) to a weak topological insulator (WTI). #### Specific objectives: - **Understand the microscopic mechanism**: Reveal how coherent phonons can change the topological properties of the material by modulating the lattice symmetry and strain field, thereby affecting carrier excitation. - **Verify experimental observations**: Verify the phenomenon of the increasing carrier density observed in the experiment through theoretical simulations and provide a detailed physical - mechanism explanation. - **Develop an effective model**: Construct a simplified but effective model to capture the essence of this complex phenomenon and provide a theoretical basis for further research. #### Summary: The main purpose of this paper is to gain an in - depth understanding, through a combination of theoretical simulations and experimental data, of how laser - driven coherent phonons can induce carrier excitation in ZrTe₅, especially the carrier - pumping process achieved through the LZS tunneling mechanism. This not only helps to explain experimental phenomena but also provides theoretical guidance for the future design of new topological quantum materials.

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