Abstract:Silicon has been commonly used in the microelectromechanical systems (MEMS) community for the past sixty years, and anisotropic wet etching with tetramethylammonium hydroxide (TMAH) has been central to these fabrication efforts. It has been shown anisotropic wet etching of silicon is an ideal method to rapidly fabricate components with huge production volume, and low cost. Although TMAH has been commonly used to create integrated circuits, the technology hasn’t been fully explored for optical applications. Four types of light concentrating arrays were fabricated with this technology in this work: (i) micropyramids with 54.7˚ sidewall angle, (ii) microcones with 45˚ sidewall angle, (iii) inverted square pyramids with 54.7˚ sidewall angle, and (iv) inverted triangular pyramids with different sidewall angles. The 54.7˚ sidewall angle arrays have smooth sidewalls due to etching with TMAH, which reduces scattering loss. The 3-D microphotonic structures were created through a comparable fabrication protocol, but require different photoresists, mask alignments, and if the surfactant Triton X-100 was utilized during the etch. The fabricated structures can be either heterogeneously integrated with front-illuminated focal plane arrays (FPAs) created in material systems with high quantum efficiency, or be monolithically integrated with metal/silicide Schottky barrier photodetectors for operation in short-wave infrared (SWIR) or mid-wave infrared (MWIR) regimes. The light concentrating capability of the proposed structures was tested by finite-difference time-domain modeling. Experimentally, the formation of photonic nanojets at the tips of micropyramids was demonstrated using illumination by a 2.96 μm wavelength Er:YAG laser.

Photodetector Focal Plane Arrays Integrated with Silicon Micropyramidal Structures in MWIR

Fabrication and Characterization of a New Type 4×4 Arrayed Position-Sensitive Detector

Fabrication and characterization of a new type 4 × 4 arrayed position sensitive detector

Focusing and Diffraction of Light by Periodic Si Micropyramidal Arrays

Surface State Induced Filterless SWIR Narrow-Band Si Photodetector

Large-Area Periodic Organic-Inorganic Hybrid Perovskite Nanopyramid Arrays for High-Performance Photodetector and Image Sensor Applications

Waveguide-Integrated PdSe2 Photodetector over a Broad Infrared Wavelength Range

Surface Plasmon Enhanced Schottky Barrier Detector Based on Nanodisk Array Structure for CMOS Compatible Optical Integrated Circuits

Near Infrared Efficiency Enhancement of Silicon Photodiodes by Integration of Metal Nanostructures Supporting Surface Plasmon Polaritrons

Germanium Photodetector with Enhanced Photo-response at the L-band and Beyond for Integrated Photonic Applications

Multilayered PtSe 2 /pyramid-Si heterostructure array with light confinement effect for high-performance photodetection, image sensing and light trajectory tracking applications

Fabrication of 3-D light concentrating microphotonic structures by anisotropic wet etching of silicon

Self‐assembled Dielectric Microsphere As Light Concentrators for Ultrathin‐silicon‐based Photodetectors with Broadband Enhancement

Graphene/silicon-quantum-dots/Si Schottky-PN cascade heterojunction for short-wavelength infrared photodetection

Monolithically Integrated Waveguide-Coupled Single-Photon Avalanche Photodetector in a Visible-Light Silicon Photonics Platform

Light Trapping in Conformal CuO/Si Pyramids Heterojunction for Self-Powered Broadband Photodetection

Fully Depleted Self‐Aligned Heterosandwiched Van Der Waals Photodetectors

High-Performance Ultraviolet Photodetector Based on Single-Crystal Integrated Self-Supporting 4H-SiC Nanohole Arrays

Position sensitive SiPM detector for Cherenkov applications

GeSn 320 \times 256 Focal Plane Array for Silicon-Based Short-wave Infrared Imaging

Achieving higher photoabsorption than group III-V semiconductors in ultrafast thin silicon photodetectors with integrated photon-trapping surface structures