Abstract:We investigate the electronic, structural, and topologicalpropertiesof the SnTe and PbTe cubic nanowires using ab initio calculations. Using standard and linear-scale density functionaltheory, we go from the ultrathin limit up to the nanowire thicknessesobserved experimentally. Finite-size effects in the ultrathin limitproduce an electric quadrupole and associated structural distortions;these distortions increase the band gap, but they get reduced withthe size of the nanowires and become less and less relevant. UltrathinSnTe cubic nanowires are trivial band gap insulators; we demonstratethat by increasing the thickness, there is an electronic transitionto a spin–orbit insulating phase due to trivial surface statesin the regime of thin nanowires. These trivial surface states witha spin–orbit gap of a few meV appear at the same k-point of the topological surface states. Going to the limit of thicknanowires, we should observe the transition to the topological crystallineinsulator phase with the presence of two massive surface Dirac fermionshybridized with the persistent trivial surface states. Therefore,we have the copresence of massive Dirac surface states and trivialsurface states close to the Fermi level in the same region of the k-space. According to our estimation, the cubic SnTe nanowiresare trivial insulators below the critical thickness tc1 = 10 nm, and they become spin–orbitinsulators between tc1 = 10 nm and tc2 = 17nm, while they transit to the topological phase above the criticalthickness of tc2 = 17nm. These critical thickness values are in the range of typical experimentalthicknesses, making the thickness a relevant parameter for the synthesisof topological cubic nanowires. Pb1–xSnxTe nanowires would have boththese critical thicknesses tc1 and tc2 at largervalues depending on the doping concentration. We discuss the limitationsof density functional theory in the context of topological nanowiresand the consequences of our results on topological electronics.

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