Density Functional Theory Study of the Spin–Orbit Insulating Phase in SnTe Cubic Nanowires: Implications for Topological Electronics

Ghulam Hussain,Kinga Warda,Giuseppe Cuono,Carmine Autieri
DOI: https://doi.org/10.1021/acsanm.4c00506
IF: 6.14
2024-03-27
ACS Applied Nano Materials
Abstract:<p></p><p>We investigate the electronic, structural, and topologicalpropertiesof the SnTe and PbTe cubic nanowires using ab initio calculations. Using standard and linear-scale density functionaltheory, we go from the ultrathin limit up to the nanowire thicknessesobserved experimentally. Finite-size effects in the ultrathin limitproduce an electric quadrupole and associated structural distortions;these distortions increase the band gap, but they get reduced withthe size of the nanowires and become less and less relevant. UltrathinSnTe cubic nanowires are trivial band gap insulators; we demonstratethat by increasing the thickness, there is an electronic transitionto a spin–orbit insulating phase due to trivial surface statesin the regime of thin nanowires. These trivial surface states witha spin–orbit gap of a few meV appear at the same k-point of the topological surface states. Going to the limit of thicknanowires, we should observe the transition to the topological crystallineinsulator phase with the presence of two massive surface Dirac fermionshybridized with the persistent trivial surface states. Therefore,we have the copresence of massive Dirac surface states and trivialsurface states close to the Fermi level in the same region of the k-space. According to our estimation, the cubic SnTe nanowiresare trivial insulators below the critical thickness t<sub>c1</sub> = 10 nm, and they become spin–orbitinsulators between t<sub>c1</sub> = 10 nm and t<sub>c2</sub> = 17nm, while they transit to the topological phase above the criticalthickness of t<sub>c2</sub> = 17nm. These critical thickness values are in the range of typical experimentalthicknesses, making the thickness a relevant parameter for the synthesisof topological cubic nanowires. Pb<sub>1–x</sub>Sn<sub>x</sub>Te nanowires would have boththese critical thicknesses t<sub>c1</sub> and t<sub>c2</sub> at largervalues depending on the doping concentration. We discuss the limitationsof density functional theory in the context of topological nanowiresand the consequences of our results on topological electronics.</p>
materials science, multidisciplinary,nanoscience & nanotechnology
What problem does this paper attempt to address?
The paper primarily investigates the electronic, structural, and topological properties of cubic nanowires of tin telluride (SnTe) and lead telluride (PbTe), and explores how these properties change with the thickness of the nanowires. Specifically, the paper attempts to address the following issues: 1. **Electronic Properties and Structural Changes**: - The paper uses first-principles calculations to study the electronic band gap and structural changes of SnTe and PbTe cubic nanowires at different thicknesses. - The study finds that in the ultra-thin limit, the nanowires exhibit electric quadrupole moments and associated structural distortions, leading to an increase in the band gap; as the thickness of the nanowires increases, this distortion gradually weakens. 2. **Topological Phase Transition**: - The study investigates the phase transition of SnTe cubic nanowires from an insulator to a topological insulator. - It is found that ultra-thin SnTe nanowires are trivial band gap insulators, and as the thickness increases, they undergo a transition from a band gap insulator to a spin-orbit insulator. - Within a specific thickness range (approximately 10 to 17 nanometers), SnTe nanowires transition to topological crystalline insulators, exhibiting two surface Dirac fermions that hybridize with the persistent trivial surface states. 3. **Critical Thickness Values**: - The critical thickness values of SnTe nanowires are calculated to be tc1 = 10 nanometers and tc2 = 17 nanometers, which fall within the typical experimental thickness range, indicating that thickness is an important synthesis parameter. - For doped Pb1-xSnxTe nanowires, these two critical thickness values will increase with different doping concentrations. 4. **Limitations of Density Functional Theory**: - The limitations of density functional theory in the study of topological nanowires and its impact on topological electronics are discussed. Through these studies, the paper aims to reveal the topological characteristics of SnTe and PbTe nanowires at different thicknesses and their potential applications.