Abstract:Electro-optic modulation, the imprinting of a radio-frequency (RF) waveform on an optical carrier, is one of the most important photonics functions, being crucial for high-bandwidth signal generation, optical switching, waveform shaping, data communications, ultrafast measurements, sampling, timing and ranging, and RF photonics. Although silicon (Si) photonic electro-optic modulators (EOMs) can be fabricated using wafer-scale technology compatible with the semiconductor industry, such devices do not exceed an electrical 3-dB bandwidth of about 50 GHz, whereas many applications require higher RF frequencies. Bulk Lithium Niobate (LN) and etched LN modulators can scale to higher bandwidths, but are not integrated with the Si photonics fabrication process adopted widely over the last decade. As an alternative, an ultra-high-bandwidth Mach-Zehnder EOM based on Si photonics is shown, made using conventional lithography and wafer-scale fabrication, bonded to an unpatterned LN thin film. This hybrid LN-Si MZM achieves beyond 100 GHz 3-dB electrical bandwidth. Our design integrates silicon photonics light input/output and optical components, including directional couplers, low-radius bends, and path-length difference segments, realized in a foundry Si photonics process. The use of a simple low-temperature (200C) back-end integration process to bond a postage-stamp-sized piece of LN where desired, and achieving light routing into and out of LN to harness its electro-optic property without any etching or patterning of the LN film, may be broadly-useful strategies for advanced integrated opto-electronic microchips.

Optical Linearization of Silicon Photonic Ring-Assisted Mach-Zehnder Modulator

High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

High-Baudrate Silicon Photonics Ring Resonator and Mach-Zehnder Modulators for Short-Reach Applications

Analysis of Trade-offs in RF Photonic Links based on Multi-Bias Tuning of Silicon Photonic Ring-Assisted Mach Zehnder Modulators

Highly linear silicon Mach-Zehnder modulators with optimized phase-shifter

High Linearity Silicon Modulator Capable of Actively Compensating Input Distortion.

Silicon Dual-Series Mach-Zehnder Modulator with High Linearity

High-Linearity Silicon Modulator Based On A Reconfigurable Microring-Assisted Mach-Zehnder Interferometer

Hybrid Silicon Photonic-Lithium Niobate Electro-Optic Mach-Zehnder Modulator Beyond 100 GHz Bandwidth

A high linear silicon Mach-Zehnder modulator by the dual-series architecture

Linearity Comparison of Silicon Carrier-Depletion-Based Single, Dual-Parallel, and Dual-Series Mach–Zehnder Modulators

Optical Ring-Resonator Modulator Based on 0.8 Μm CMOS Technology

Ring-Assisted Mach-Zehnder Modulator on the InP Membrane on Silicon Platform

High-Linearity Fano Resonance Modulator Using a Microring-Assisted Mach–Zehnder Structure

A Silicon Optical Single Sideband Modulator with Ultra-High Sideband Suppression Ratio

High-speed Silicon Modulators for the 2 Μm Wavelength Band

Improved Extinction Ratio of Mach-Zehnder Based Optical Modulators on CMOS Platform

High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization.

High-Speed Modulator With Integrated Termination Resistor Based on Hybrid Silicon and Lithium Niobate Platform

Dynamic performance of silicon Mach-Zehnder electro-optic modulator with two silicon layers

110 GHz, 110 mW hybrid silicon-lithium niobate Mach-Zehnder modulator