Abstract:The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of existing CMOS integration technologies, such devices can offer a platform for large scale quantum computation. However, a quantum mechanical framework bridging a device's physical design and operational parameters to the qubit energy space is lacking. Furthermore, the spin to charge coupling introduced by intrinsic or induced Spin-Orbit-Interaction (SOI) exposes the qubits to charge noise compromising their coherence properties and inducing quantum gate errors. We present here a co-modelling framework for double quantum dot (DQD) devices and their charge noise environment. We use a combination of an electrostatic potential solver, full configuration interaction quantum mechanical methods and two-level-fluctuator models to study the quantum gate performance in realistic device designs and operation conditions. We utilize the developed models together alongside the single electron solutions of the quantum dots to simulate one- and two- qubit gates in the presence of charge noise. We find an inverse correlation between quantum gate errors and quantum dot confinement frequencies. We calculate X-gate fidelities >97% in the simulated Si-MOS devices at a typical TLF densities. We also find that exchange driven two-qubit SWAP gates show higher sensitivity to charge noise with fidelities down to 91% in the presence of the same density of TLFs. We further investigate the one- and two- qubit gate fidelities at different TLF densities. We find that given the small size of the quantum dots, sensitivity of a quantum gate to the distance between the noise sources and the quantum dot creates a strong variability in the quantum gate fidelities which can compromise the device yields in scaled qubit technologies.

Assessing quantum dot SWAP gate fidelity using tensor network methods

A SWAP Gate for Spin Qubits in Silicon

Spin-Valley Qubit Dynamics In Exchange Coupled Silicon Quantum Dots

Analysis and mitigation of residual exchange coupling in linear spin qubit arrays

Quantum State Tomography of an On-chip Polarization-Spatial Qubit SWAP Gate

Optimal control of a cavity-mediated iSWAP gate between silicon spin qubits

Ab initio modelling of quantum dot qubits: Coupling, gate dynamics and robustness versus charge noise

Assessment of the errors of high-fidelity two-qubit gates in silicon quantum dots

Robustness Analysis of Quantum State Transfer through Spin-Chain in Diamond for Room-Temperature Quantum Computing

Limits to Quantum Gate Fidelity from Near-Field Thermal and Vacuum Fluctuations

SWAP-less Implementation of Quantum Algorithms

Modelling semiconductor spin qubits and their charge noise environment for quantum gate fidelity estimation

Swap Test with Quantum-Dot Charge Qubits

Analytical view on tunnable electrostatic quantum swap gate in tight-binding model

A chip-scale polarization-spatial-momentum quantum SWAP gate in silicon nanophotonics

Large spin shuttling oscillations enabling high-fidelity single qubit gates

Quantum tensor network algorithms for evaluation of spectral functions on quantum computers

An Efficient On-chip Single-photon SWAP Gate for Entanglement Manipulation

Characterization and benchmarking of a phase-sensitive two-qubit gate using direct digital synthesis

Dynamical regimes of a quantum SWAP gate beyond the Fermi golden rule

Impact of leakage to the dynamic of a ST$_0$ qubit implemented on a Double Quantum Dot device