Abstract:The carriers' mobility in 5d transition metal oxides‐based two‐dimensional electron systems is significantly hampered by the inevitable presence of defects. In order to overcome this challenge, ionic‐liquid gating at room temperature is applied to affect the oxygen vacancies and efficiently reduce any disorder at the interface. In this way, very high mobility of the amorphous LaAlO3/KTaO3 interface is demonstrated. Due to the coexistence of many emergent phenomena, including 2D superconductivity and a large Rashba spin‐orbit coupling, 5d transition metal oxides‐based two‐dimensional electron systems (2DESs) have been prospected as one of the potential intrants for modern electronics. However, despite the lighter electron mass, the mobility of carriers, a key requisite for high‐performance devices, in 5d‐oxides devices remains far behind their 3d‐oxides analogs. The carriers' mobility in these oxides is significantly hampered by the inevitable presence of defects. Here, very high mobility (≈22 650 cm2 V−1 s−1) of 5d‐2DES confined at the LaAlO3/KTaO3 interface is reported. The high mobility, which is beyond the values observed in SrTiO3 2DESs in the same carrier‐density range, is achieved using the ionic‐liquid gating at room temperature. The authors postulate that the ionic‐liquid gating affects the oxygen vacancies and efficiently reduces any disorder at the interface. Investigating density and mobility in a broad range of back‐gate voltage, the authors reveal that the mobility follows the power‐law μ ∝ n1.2, indicating the very high quality of ionic‐liquid‐gated LaAlO3/KTaO3 devices, consistent with the postulate. Furthermore, the analysis of the quantum oscillations confirms that the high‐mobility electrons occupy the electronic sub‐bands emerging from the Ta:5d orbitals of KTaO3.

Unconventional quantum oscillations and evidence of nonparabolic electronic states in quasi-two-dimensional electron system at complex oxide interfaces

Dirac-like fermions anomalous magneto-transport in a spin-polarized oxide two-dimensional electron system

Dirac‐Like Fermions Anomalous Magneto‐Transport in a Spin‐Polarized Oxide 2D Electron System

2D surprises at the surface of 3D materials: confined electron systems in transition metal oxides

Spin-charge interconversion in KTaO$_3$ two-dimensional electron gases

Unusual Electric and Optical Tuning of KTaO3-Based Two-Dimensional Electron Gases with 5d Orbitals.

Two-Dimensional Electron Systems In Perovskite Oxide Heterostructures: Role Of The Polarity-Induced Substitutional Defects

Aperiodic quantum oscillations in the two-dimensional electron gas at the LaAlO3/SrTiO3 interface

Electric field control of disorder-tunable superconductivity and the emergence of quantum metal at an oxide interface

High-Mobility Spin-Polarized Two-Dimensional Electron Gases at EuO/KTaO_{3} Interfaces.

Tunable Two-Dimensional Superconductivity and Spin-Orbit Coupling at the EuO/KTaO3(110) Interface

High valley-degeneracy electron gas at double perovskite - strontium titanate interface

Ionic Modulation at the LaAlO3/KTaO3 Interface for Extreme High‐Mobility Two‐Dimensional Electron Gas

Quantum Hall effect in a CVD-grown oxide

Long-Range Magnetic Order in Oxide Quantum Wells Hosting Two-Dimensional Electron Gases.

Quantum well structure of a double perovskite superlattice and formation of a spin-polarized two-dimensional electron gas

Topological superconductivity from transverse optical phonons in oxide heterostructures

Quantum interference in an interfacial superconductor

Giant Tunability of Rashba Splitting at Cation-Exchanged Polar Oxide Interfaces by Selective Orbital Hybridization.

Quantum Confinement in Oxide Heterostructures: Room-Temperature Intersubband Absorption in SrTiO 3 /LaAlO 3 Multiple Quantum Wells.

Liquid-Gated High Mobility and Quantum Oscillation of the Two-Dimensional Electron Gas at an Oxide Interface