Abstract:Silicon quantum computing has the potential to revolutionize technology with capabilities to solve real-life problems that are computationally complex or even intractable for modern computers [1] by offering sufficient high quality qubits to perform complex error-corrected calculations. Silicon metal-oxide-semiconductor based quantum dots present a promising pathway for realizing practical quantum computers. To improve certain qubit properties, it is a common strategy to incorporate multiple electrons in the same dot in order to form qubits in higher confined orbital states. Theoretical modelling is an essential part of understanding the quantum behaviour of these electrons, providing a basis for validating the physical working of device models as well as providing insights into experimental data. Hartree-Fock theory is an imperative tool for the electronic structure modelling of multi-electron quantum dots due to its ability to simulate a large number of electrons with manageable computation load. However, an efficient calculation of the self-consistent field becomes hard because dot formations in silicon are characterized by strong electron-electron interactions and conduction band valleys, besides the relatively high comparative effective mass, which add to create a behaviour dominated by repulsion between electrons rather than a well established shell structure. In this paper, we present a Hartree-Fock-based method that accounts for these complexities for the modelling of silicon quantum dots. With this method, we first establish the significance of including electron-electron interactions and valley degree of freedom and their implications. We then explore a simple case of anisotropic dots and observe the impact of anisotropy on dot formations.

Path integral simulation of exchange interactions in CMOS spin qubits

Simulation Methodology for Electron Transfer in CMOS Quantum Dots

Exchange control in a MOS double quantum dot made using a 300 mm wafer process

Electrical manipulation of a single electron spin in CMOS with micromagnet and spin-valley coupling

Quantum Simulator for Many-Body Electron-Electron Coulomb Interaction with Ion Traps

Ion-based quantum simulation of many-body electron–electron Coulomb interaction

Ab initio modelling of quantum dot qubits: Coupling, gate dynamics and robustness versus charge noise

Bounds to electron spin qubit variability for scalable CMOS architectures

Error-mitigated quantum simulation of interacting fermions with trapped ions

Methods for transverse and longitudinal spin-photon coupling in silicon quantum dots with intrinsic spin-orbit effect

Common-Mode Control and Confinement Inversion of Electrostatically Defined Quantum Dots in a Commercial CMOS Process

Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform

Analog Quantum Simulator of a Quantum Field Theory with Fermion-Spin Systems in Silicon

Impact of electrostatic crosstalk on spin qubits in dense CMOS quantum dot arrays

Simulation of Si:P spin-based quantum computer architecture

Silicon CMOS architecture for a spin-based quantum computer

A Generalizable TCAD Framework for Silicon FinFET Spin Qubit Devices with Electrical Control

Simulated Charge Stability in a MOSFET Linear Quantum Dot Array

Electronic Correlations in Multielectron Silicon Quantum Dots

Single-electron operation of a silicon-CMOS 2x2 quantum dot array with integrated charge sensing

Simulation of "ab Initio" Quantum Confinement Scattering in Utb Mosfets Using Three-Dimensional Ensemble Monte Carlo