Abstract:Since the landmark paper by Hicks and Dresselhaus [Phys. Rev. B 47 , 16631(R) (1993)], there has been a general consensus that one-dimensional nanoscale conductors, i.e. nanowires, provide the long sought paradigm to implement the so-called phonon-glass electron-crystal material, which results in large improvements in the thermoelectric figure of merit ZT . Despite some encouraging—though isolated—experimental results, this idea has never been subjected to a rigorous scrutiny and the effect of the coupled dynamics of electrons and phonons has usually been oversimplified. To bypass these limitations, we have calculated the effective thermoelectric parameters for silicon nanowires (SiNWs) by iteratively solving the coupled electron-phonon Boltzmann transport equation (EPBTE) supplied with first-principles data. This allows for an unprecedented precision in determining the correct dependence of the thermoelectric parameters with system size; including, but not limited to, the figure of merit and its enhancement or degradation due to nanostructuring. Indeed, we demonstrate that the commonly used relaxation time approximation (RTA), or the uncoupled beyond the RTA (iterative) solution fail to describe the correct effect of nanostructuring on the thermoelectric properties and efficiency in SiNWs due to the strong contribution of phonon drag to the Seebeck coefficient, so that the use of fully coupled solution of the EPBTE is essential to obtain the correct effect of nanostructuring. Most importantly, we show that, contrarily to what commonly argued, resorting to NWs is not necessarily beneficial for ZT . Indeed, in a wide range of diameters nanostructuring diminishes the Seebeck coefficient faster than the decrease in thermal conductivity, due to the suppression of very long wavelength phonons responsible for the largest contribution to the phonon drag component of the Seebeck coefficient. This penalty to ZT can be mitigated if the NWs have a very rough surface, providing additional reduction to the thermal conductivity. Additionally, we demonstrate that our methodology provides improved data sets for an accurate determination of doping concentration in NWs through electrical-based inference and excellent agreement with the available experimental data.

Role of Dimensionality and Size in Controlloing the Drag Seebeck Coefficient of Doped Silicon Nanostructures: A Fundamental Understanding

Perspective of Computing Thermal Transport in Low-Dimensional Materials and Nanostructures

Super-Suppression of Long Phonon Mean-Free-Paths in Nano-engineered Si due to Heat Current Anticorrelations

Phonon Knudsen flow in nanostructured semiconductor systems

Isotope Doping-Induced Crossover Shift in the Thermal Conductivity of Thin Silicon Nanowires.

Methodology Perspective Of Computing Thermal Transport In Low-Dimensional Materials And Nanostructures: The Old And The New

Size Dependent Thermal Conductivity of Si Nanosystems Based on Phonon Gas Dynamics

A Unified Phonon Interpretation for the Non-Fourier Heat Conduction by Non-equilibrium Molecular Dynamics Simulations

Monte Carlo simulations for phonon transport in silicon nanomaterials

Thermal and Thermoelectric Transport in Nanostructures and Low-Dimensional Systems

Electron Drag Effect on Thermal Conductivity in Two-dimensional Semiconductors

Significant Phonon Drag Effect in Wide Bandgap GaN and AlN

Thermal Anisotropy Enhanced by Phonon Size Effects in Nanoporous Materials

Atomistic simulations of heat transport in real-scale silicon nanowire devices

Cross-plane Heat Conduction in Nanoporous Silicon Thin Films by Phonon Boltzmann Transport Equation and Monte Carlo Simulations

The Role of Electron-Phonon Interaction in Heavily Doped Fine-Grained Bulk Silicons As Thermoelectric Materials

Degradation of the ZT thermoelectric figure of merit in silicon when nanostructuring: From bulk to nanowires

Directional Phonon Suppression Function as a Tool for the Identification of Ultralow Thermal Conductivity Materials

Ballistic–diffusive Phonon Transport and Size Induced Anisotropy of Thermal Conductivity of Silicon Nanofilms

A new regime of nanoscale thermal transport: collective diffusion counteracts dissipation inefficiency

Direct observation of large electron–phonon interaction effect on phonon heat transport