Abstract:In preparation for the forthcoming High-Luminosity phase of the Large Hadron Collider, the ATLAS experiment is working on major upgrades to its detector systems to effectively accommodate the increase in radiation levels and track density. The foremost among these upgrades entails the replacement of the current inner tracking detector with an advanced all-silicon Inner Tracker (ITk). In the outer region of the ITk apparatus is the Strip Detector. Central to the new strip tracking system are the ITk Strip modules, comprising silicon sensors and hybrid Printed Circuit Boards housing the integral read-out Application-Specific Integrated Circuits (ASICs) as well as power distribution services. Thorough characterisation of the electrical characteristics of the silicon strip modules at various stages of the assembly procedure holds paramount significance in evaluating module performance. This rigorous evaluation ensures timely identification of any anomalies, thereby enabling proactive remedial measures. Notably, during the course of these electrical assessments, certain modules manifested breakdown phenomena occurring below the prescribed threshold of 500 V, mandated by the ITk Quality Control protocols. Based on these observations, controlled exposure to low levels of radiation was suspected to elevate the breakdown voltage in susceptible sensors. This contribution presents results from two irradiation campaigns to investigate potentially beneficial effects of irradiation. One study investigates the effects of gamma irradiation on modules showing an early breakdown after gluing. For this study, modules were exposed to an ionising dose of 11 krad (corresponding to the dose accumulated after several days of operation in the HL-LHC) utilising a 60 Co source. The second campaign focuses on silicon sensor test structures with low breakdown voltage due to intentionally caused mechanical defects and their development after exposure to reactor neutrons. In both cases, preliminary findings suggest a discernible improvement in the breakdown voltage.

Destructive breakdown studies of irradiated LGADs at beam tests for the ATLAS HGTD

Curing early breakdown in silicon strip sensors with radiation

Performance in beam tests of Carbon-enriched irradiated Low Gain Avalanche Detectors for the ATLAS High Granularity Timing Detector

Evolution of the electrical characteristics of the ATLAS18 ITk strip sensors with HL-LHC radiation exposure range

Electrical Characterization of 180 nm ATLASPix2 HV-CMOS Monolithic Prototypes for the High-Luminosity LHC

Radiation hardness studies of AMS HV-CMOS 350 nm prototype chip HVStripV1

A Leakage Current-based Measurement of the Radiation Damage in the ATLAS Pixel Detector

Beam Test Results of NDL Low Gain Avalanche Detectors (LGAD)

Testbeam Studies of Barrel and End-Cap Modules for the ATLAS ITk Strip Detector Before and after Irradiation

Radiation damage in the LHCb Vertex Locator

Electrical characterization of AMS aH18 HV-CMOS after neutrons and protons irradiation

TCAD Analysis of Leakage Current and Breakdown Voltage in Small Pitch 3D Pixel Sensors

Design and testing of LGAD sensor with shallow carbon implantation

Gain layer degradation study after neutron and proton irradiations in Low Gain Avalanche Diodes

Testbeam analysis of biasing structures for irradiated hybrid pixel detectors

Investigation of low gain avalanche detectors exposed to proton fluences beyond 10 15 n eq cm -2

Characterization of the response of IHEP-IME LGAD with shallow carbon to Gamma Irradiation

Low-Energy Ion-Induced Single-Event Burnout in Gallium Oxide Schottky Diodes

Radiation Tolerance of the LHCb Outer Tracker: in the Lab and in the Forward Region at the LHC

Study of the effects of radiation on the CMS Drift Tubes Muon Detector for the HL-LHC

Investigation of low gain avalanche detectors exposed to proton fluences beyond 10$^{15}$ n$_\mathrm{eq}$cm$^{-2}$