Abstract:We report on the experimental study made on a successive prototype of High-Voltage CMOS (HV-CMOS) ATLASPix2 sensor for the tracking detector application, developed with 180 nm feature size. These sensors are to qualify mainly the peripheral data processing blocks (e.g. Command Decoder, Trigger Buffer, etc.). It is a smaller version of 24 X 36 pixelated sensor in comparison to the earlier generation of ATLASPix1 fabricated in both ams AG, Austria, and TSI Semiconductors, USA. While ams produced ATLASPix2 showed breakdown voltage 50 V in nonirradiated condition as it was seen on its predecessors ATLASpix1, TSI produced prototypes reported breakdown voltage greater than 100 V. The chosen wafer of MCz 20 <a class="link-external link-http" href="http://Ohm.cm" rel="external noopener nofollow">this http URL</a> P-type substrate resistivity can deplete a few tenths of um, where the process-driven surface damage can have a greater impact on device operating conditions before and after irradiation. In an aim to understand device intrinsic performance at the irradiated case, a dedicated neutron irradiation campaign has been made at JSI for different fluences. Characterizations have been performed at different temperatures after irradiation to analyze the leakage current and breakdown voltage before and after irradiation. TSI prototypes showed a breakdown voltage decrease 90 V due to impact ionization and enhanced effective doping concentration. Results demonstrated for the neutron-irradiated devices up to the fluence of 2 X 10^15 neq/cm2 can still safely be operated at a voltage high enough to allow for high efficiency. Accelerated Annealing steps also made on selective irradiated ATLASPix2 samples, equivalent to more than two years of room-temperature annealing (at 20 degC), and they showed the reassuring expected breakdown voltage increase and damage constant rate alpha^* (geometry dependent) decrease, driven by the beneficial annealing.

A Leakage Current-based Measurement of the Radiation Damage in the ATLAS Pixel Detector

Sensor response and radiation damage effects for 3D pixels in the ATLAS IBL Detector

A measurement of Lorentz angle of radiation-hard pixel sensors

Signal and noise of Diamond Pixel Detectors at High Radiation Fluences

Irradiation Tests and Expected Performance of Readout Electronics of the ATLAS Hadronic Endcap Calorimeter for the HL-LHC

Radiation experience with the CMS pixel detector

Measurements on HV-CMOS Active Sensors After Irradiation to HL-LHC fluences

Electrical Characterization of 180 nm ATLASPix2 HV-CMOS Monolithic Prototypes for the High-Luminosity LHC

Radiation hardness studies of AMS HV-CMOS 350 nm prototype chip HVStripV1

Updated Results of a Solid-State Sensor Irradiation Study for ILC Extreme Forward Calorimetry

Radiation Hardness Property of Ultra-Fast 3D-Trench Electrode Silicon Detector on N-Type Substrate

Electrical characterization of AMS aH18 HV-CMOS after neutrons and protons irradiation

Destructive breakdown studies of irradiated LGADs at beam tests for the ATLAS HGTD

Recent progress of the ATLAS Planar Pixel Sensor R&D Project

Evolution of the electrical characteristics of the ATLAS18 ITk strip sensors with HL-LHC radiation exposure range

Planar pixel sensors for the ATLAS upgrade: beam tests results

TCAD Analysis of Leakage Current and Breakdown Voltage in Small Pitch 3D Pixel Sensors

Optics robustness of the ATLAS Tile Calorimeter

A Lightweight Algorithm to Model Radiation Damage Effects in Monte Carlo Events for High-Luminosity Large Hadron Collider Experiments

Neutron and proton tests of different technologies for the upgrade of the cold readout electronics of the ATLAS Hadronic End-cap Calorimeter

Charge Collection Efficiency Simulations of Irradiated Silicon Strip Detectors