Spin and orbital Hall currents detected via current induced magneto-optical Kerr effect in V and Pt

Y. Marui,M. Kawaguchi,S. Sumi,H. Awano,K. Nakamura,M. Hayashi

DOI: https://doi.org/10.1103/PhysRevB.108.144436

2023-10-26

Abstract:We have studied the film thickness dependence of the current-induced magneto-optical Kerr effect in Pt and V thin films. The Kerr signal for Pt shows little dependence on the thickness in the range studied (20-80 nm). In contrast, the signal for V increases with increasing thickness and saturates at a thickness near 100 nm to a value significantly larger than that of Pt. These experimental results are accounted for assuming that spin and orbital Hall effects are responsible for the Kerr signal. We show that the Kerr signal is proportional to the product of the dc spin (orbital) Hall conductivity and the energy derivative of the ac spin (orbital) Hall conductivity. Contributions from the spin and orbital Hall effects mostly add up for V whereas they cancel out for Pt. Assuming that the orbital Hall conductivity matches that predicted from first-principles calculations, the thickness dependence of the Kerr signal suggests that the orbital diffusion length of V is considerably smaller compared to its spin diffusion length.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The main problem this paper attempts to address is the study of current-induced spin and orbital magnetic moments in non-magnetic metal monolayer films through the Longitudinal Magneto-Optical Kerr Effect (MOKE). Specifically:

1. **Experimental Background**: Efficient generation of spin currents is one of the key challenges in developing random access memory and storage-class memory technologies. The spin Hall effect is considered the best way to generate spin currents using materials compatible with semiconductor manufacturing processes. The Spin Hall Angle is typically used to represent the efficiency of spin current generation.

2. **Theoretical Basis**: The spin Hall effect can be divided into intrinsic and extrinsic mechanisms. The intrinsic spin Hall effect is determined by the electronic structure of the host material and is related to the total spin and orbital angular momentum coupling of the host elements; the extrinsic spin Hall effect can be enhanced by appropriate doping to increase the spin Hall conductivity.

3. **Experimental Purpose**: The authors experimentally compared the MOKE signals of platinum (Pt) and vanadium (V) films at different thicknesses. Pt has been widely studied for its large spin Hall conductivity, while V is predicted to have a large orbital Hall conductivity. The experimental results show that for Pt, the MOKE signal has little dependence on film thickness; for V, the MOKE signal significantly increases and saturates when the thickness increases to about 100 nanometers.

4. **Theoretical Explanation**: To explain these experimental results, the authors developed a simple model assuming that both spin and orbital Hall effects contribute to the MOKE signal. They found that in Pt, the contributions of the spin and orbital Hall effects cancel each other out, while in V, these two effects add up, resulting in a much larger MOKE signal for V compared to Pt. Additionally, the analysis indicates that the orbital diffusion length in V is much shorter than its spin diffusion length.

Through these studies, the authors clarified the mechanism of current-induced magneto-optical Kerr effect in metal films and provided important insights for further exploration of spintronics applications.