Effects of thermal annealing on thermal conductivity of LPCVD silicon carbide thin films

Lei Tang,Chris Dames

2023-06-08

Abstract:The thermal conductivity (k) of polycrystalline silicon carbide thin films is relevant for thermal management in emerging silicon carbide applications like MEMS and optoelectronic devices. In such films k can be substantially reduced by microstructure features including grain boundaries, thin film surfaces, and porosity, while these microstructural effects can also be manipulated through thermal annealing. Here, we investigate these effects by using microfabricated suspended devices to measure the thermal conductivities of nine LPCVD silicon carbide films of varying thickness (from 120 - 300 nm) and annealing conditions (as-grown and annealed at 950 degrees Celsius and 1100 degrees Celsius for 2 hours, and in one case 17 hours). Fourier-transform infrared spectroscopy (FTIR) and X-ray diffraction (XRD) spectra and density measurements are also used to characterize the effects of the annealing on the microstructure of selected samples. Compared to as-deposited films, annealing at 1100 degrees Celsius typically increases the estimated grain size from 5.5 nm to 6.6 nm while decreasing the porosity from around 6.5% to practically fully dense. This corresponds to a 34% increase in the measured thin film thermal conductivity near room temperature, from 5.8 W/m-K to 7.8 W/m-K. These thermal conductivity measurements show good agreement of better than 3% with fits using a simple theoretical model based on kinetic theory combined with a Maxwell-Garnett porosity correction. Grain boundary scattering plays the dominant role in reducing the thermal conductivity of these films compared to bulk single-crystal values, while both grain size increase and porosity decrease play important roles in the partial k recovery of the films upon annealing. This work demonstrates the effects of modifying the microstructure and thus the thermal conductivity of silicon carbide thin films by thermal annealing.

Materials Science,Mesoscale and Nanoscale Physics,Applied Physics

What problem does this paper attempt to address?

The paper primarily investigates the changes in thermal conductivity of silicon carbide (SiC) films prepared by low-pressure chemical vapor deposition (LPCVD) after thermal annealing. The specific objectives of the study include:

1. **Exploring the effect of thermal annealing on the thermal conductivity of polycrystalline SiC films**: By varying the annealing temperature (950°C and 1100°C) and time (2 hours and 17 hours), the researchers measured the thermal conductivity of a series of SiC films with different thicknesses (120-300 nm) and analyzed the microstructural changes under these conditions.

2. **Characterizing the microstructural changes of the films**: Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD), and density measurements were used to characterize the microstructural changes of the films before and after thermal annealing, particularly changes in grain size and porosity.

3. **Validating the reliability of the thermal conductivity measurement method**: By measuring the thermal conductivity of samples with the same film thickness but different widths (0.60, 1.10, and 2.10 µm), the reliability of the micro-suspended device measurement method was validated.

4. **Theoretical modeling and comparison with experimental data**: A simple theoretical model was established by combining kinetic theory and the Maxwell-Garnett porosity correction formula to explain the observed changes in thermal conductivity. The results showed that after annealing at 1100°C for 2 hours, the room temperature thermal conductivity increased by approximately 34% compared to the unannealed films, mainly due to grain growth and reduced porosity.

In summary, this study aims to regulate the thermal conductivity of SiC films by controlling their microstructural characteristics (such as grain size and porosity), which is of great significance for the development of new microelectromechanical systems (MEMS) and optoelectronic devices based on SiC.