Abstract:Transition metal dichalcogenides are lamellar materials which can exhibit unique and remarkable electronic behavior due to effects of electron-electron and electron-phonon coupling. Among these materials, 1T-tantalum disulfide (1T-TaS2) has spurred considerable interest, due to its multiple first order phase transitions between different charge density wave (CDW) states. In general, the basic effects of charge density wave formation in 1T-TaS2 can be attributed to in plane re-orientation of Ta-atoms during the phase transitions. Only in recent years, an increasing number of studies has also emphasized the role of interlayer interaction and stacking order as a crucial aspect to understand the specific electronic behavior of 1T-TaS2, especially for technological systems with a finite number of layers. Obviously, continuously monitoring the out of plane expansion of the sample can provide direct inside into the rearrangement of the layer structure during the phase transition. In this letter, we therefore investigate the c-axis lattice discontinuities of 1T-TaS2 by atomic force microscopy (AFM) method under ultra-high vacuum conditions. We find that the c-axis lattice experiences a sudden contraction across the nearly-commensurate CDW (NC-CDW) phase to commensurate CDW (C-CDW) phase transition during cooling, while an expansion is found during the transition from the C-CDW phase to a triclinic CDW phase during heating. Thereby our measurements reveal, how higher order C-CDW phase can favor a more dense stacking. Additionally, our measurements also show subtler effects like e.g. two expansion peaks at the start of the transitions, which can provide further insight into the mechanisms at the onset of CDW phase transitions.

Temperature Evolution of Domains and Intradomain Chirality in 1T-TaS$_{2}$

Modulation of electronic state in copper-intercalated 1T-TaS 2

Conductance Fluctuations and Domain Depinning in Quasi-2D Charge-Density-Wave 1T-TaS$_2$ Thin Films

Origin of Distinct Insulating Domains in the Layered Charge Density Wave Material 1T-TaS2

Evolution of Microscopic Magnetic Domains in Quasi‐2D Cr0.92Te at Room Temperature

Lattice Discontinuities of 1T-TaS2 across First Order Charge Density Wave Phase Transitions

Chiral charge density waves induced by Ti-doping in 1T-TaS2

Nature of metallic and insulating domains in the CDW system 1T-TaSe2

Origin of Distinct Insulating Domains in the Layered Charge Density Wave Material 1T‐TaS2

Disorder and diffuse scattering in single-chirality ( crystals

Disorder and diffuse scattering in single-chirality (TaSe$_4$)$_2$I crystals

Interlayer charge transfer induced by electronic instabilities in the natural van der Waals hetrostructure 4H$_b$-TaS$_2$

Infrared Nanoimaging of the Metal-Insulator Transition in the Charge-Density-wave Van Der Waals Material 1T−tas2

Zone-center phonons of bulk, few-layer, and monolayer 1T-TaS$_2$: Detection of the commensurate charge density wave phase through Raman scattering

From domain walls and the stripe phase to full suppression of charge density wave in the superconducting 1T-Ti$_{1-\text{x}}$Ta$_\text{x}$Se$_2$

Observation and Manipulation of a Phase Separated State in a Charge Density Wave Material.

Intrinsic and Doping-Enhanced Superconductivity in Monolayer 1h−tas2 : Critical Role of Charge Ordering and Spin-Orbit Coupling

Reconstructed Electronic Structure in 2D vdW 1T-Ta$S_2$ for Quantum Sensing and Information Science

Dynamics of electronic states in the insulating Intermediate surface phase of 1T-TaS$_2$

Unusual Evolution of Bc2 and Tc with Inclined Fields in Restacked TaS2 Nanosheets

Flat band physics in the charge-density wave state of $1T$-TaS$_2$