Céline Ruscher,Robinson Cortes-Huerto,Robert Hannebauer,Debashish Mukherji,Alireza Nojeh,A. Srikantha Phani
Abstract:Using large scale molecular dynamics simulations, we study the thermal conductivity of bare and surface passivated silicon nanowires (SiNWs). For the cross-sectional widths $w \le 2$ nm, SiNWs become unstable because of the surface amorphosization and also due to the evaporation of a certain fraction of Si atoms. The observed surface (in-)stability is related to a large excess energy $\Delta$ of the surface Si atoms with respect to the bulk Si, resulting from the surface atoms being less coordinated and having dangling bonds.We first propose a practically relevant method that uses $\Delta$ as a guiding tool to passivate these dangling bonds with hydrogen or oxygen, stabilizing the SiNWs. These passivated SiNWs are used to calculate the thermal conductivity coefficient $\kappa$.While the expected trend of $\kappa \propto w$ is observed for all SiNWs, surface passivation provides an added flexibility of tuning $\kappa$ with the surface coverage concentration $c$ of passivated atoms.Indeed, with respect to the bulk $\kappa$, passivation of SiNW reduces $\kappa$ by 75-80\% for $c \to 50\%$ and recovers again by 50\% for the fully passivated samples. Analyzing the phonon band structures via spectral energy density, we discuss separate contributions from the surface and the core to $\kappa$. Our results also reveal that surface passivation increases SiNW stiffness, contributing to the tunability in $\kappa$.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: how to regulate the thermal conductivity (\(\kappa\)) of silicon nanowires (SiNWs) through surface passivation. Specifically, the research aims to:
1. **Establish structure - property relationships**: Understand the relationship between the structural properties of silicon nanowires and their thermal conductivity.
2. **Study surface stability**: Use the excess energy \(\Delta\) as a guiding tool to explore the influence of passivation on surface stability and excess energy.
3. **Demonstrate the flexibility of passivation**: Prove that surface passivation can provide additional flexibility for regulating thermal conductivity, especially by adjusting the surface coverage \(c\) of passivation atoms.
4. **Analyze the contributions of the surface and the core to thermal conductivity**: Reveal the different contributions of the surface and core regions to thermal conductivity through the phonon band structure.
### Research Background
With the increasing demand for nanomaterials in various applications, especially when designing nanoscale devices, modulating the physical properties of materials (such as heat transfer and mechanical stability) has become crucial. For silicon nanowires (SiNWs), their thermal conductivity \(\kappa\) is a key property that determines the applicability of the material under different environmental conditions. For example, high thermal conductivity is suitable for heat - dissipating materials, while low thermal conductivity is suitable for highly efficient thermoelectric devices.
However, when the cross - sectional width \(w\leq10\space nm\) of silicon nanowires, their thermal conductivity will change significantly, and in extreme cases, the surface will become unstable, resulting in surface amorphization or silicon atom evaporation. This instability stems from the dangling bonds of surface silicon atoms. These dangling bonds make the energy of surface atoms higher than that of bulk silicon atoms, thus leading to structural instability.
### Solution
To overcome these problems, researchers have proposed a practical method, that is, passivating surface dangling bonds with hydrogen (H) or oxygen (O) to stabilize silicon nanowires and regulate their thermal conductivity. The main findings include:
- **Thermal conductivity trend**: For all silicon nanowires, the expected \(\kappa\propto w\) trend has been observed. After passivation treatment, \(\kappa\) can be further regulated by adjusting the surface coverage \(c\) of passivation atoms.
- **Change in thermal conductivity**: Relative to bulk silicon, passivation treatment can reduce \(\kappa\) by 75 - 80%. When fully passivated, \(\kappa\) will recover to about 50%.
- **Phonon band structure analysis**: Through spectral energy density (SED) analysis, the individual contributions of the surface and core regions to thermal conductivity have been revealed.
- **Increased stiffness**: Passivation treatment increases the stiffness of silicon nanowires, which helps to regulate thermal conductivity.
In conclusion, through molecular dynamics simulations, this study has explored in detail the influence of surface passivation on the thermal conductivity of silicon nanowires and provided a theoretical basis for future design and applications.