Gallium Arsenide Optical Phased Array Photonic Integrated Circuit

Michael Nickerson,Bowen Song,Jim Brookhyser,Gregory Erwin,Jan Kleinert,Jonathan Klamkin
DOI: https://doi.org/10.1364/OE.492556
2023-04-07
Abstract:A 16-channel optical phased array is fabricated on a gallium arsenide photonic integrated circuit platform with a low-complexity process. Tested with a 1064 nm external laser, the array demonstrates 0.92° beamwidth, 15.3° grating-lobe-free steering range, and 12 dB sidelobe level. Based on a reverse biased p-i-n structure, component phase modulators are 3 mm long with DC power consumption of less than 5 ${\mu}$W and greater than 770 MHz electro-optical bandwidth. Individual 4-mm-long phase modulators based on the same structure demonstrate single-sided V${\pi}{\cdot}$L modulation efficiency ranging from 0.5 V${\cdot}$cm to 1.23 V${\cdot}$cm when tested at wavelengths from 980 nm to 1360 nm.
Optics,Applied Physics
What problem does this paper attempt to address?
The paper aims to address several key issues in optical phased arrays (OPA) for beam steering applications. Specifically: 1. **Mechanical Limitations**: Traditional beam steering methods rely on rotating light sources or devices with significant physical movement, resulting in bulky systems and steering speeds limited to the Hertz range. 2. **Existing Technology Limitations**: While silicon photonics (SiPh) is widely used in OPA research, it has the following issues: - Phase modulators based on thermal effects are limited to megahertz speeds and have high power consumption. - Phase modulators based on carriers are faster but have high residual amplitude modulation (RAM). - The bandgap of silicon limits its operation to wavelengths above 1100 nanometers, excluding the wavelength range around 1000 nanometers required for common terrain and long-range sensing LiDAR. To address these issues, researchers have developed a photonic integrated circuit (PIC) platform based on gallium arsenide (GaAs), achieving a 16-channel OPA with low-complexity processes. This platform has the following features: - Phase modulators exhibit characteristics of wide bandwidth, high speed, and low RAM. - At a wavelength of 1064 nanometers, test results show a beam width of 0.92°, a grating-lobe-free steering range of 15.3°, and a sidelobe level of 12 dB. - The DC power consumption of the phase modulators is less than 5 microwatts, and the electro-optic bandwidth is greater than 770 megahertz. Through these improvements, researchers have demonstrated the potential of the GaAs PIC platform in achieving high-performance OPA, especially in the wavelength range around 1000 nanometers.