Defeating Broken Symmetry with Doping: Symmetric Resonant Tunneling in Noncentrosymetric Heterostructures

Jimy Encomendero,Vladimir Protasenko,Debdeep Jena,Huili Grace Xing

DOI: https://doi.org/10.1103/PhysRevB.107.125301

2023-03-15

Abstract:Resonant tunneling transport in polar heterostructures is intimately connected to the polarization fields emerging from the geometric Berry-phase. In these structures, quantum confinement results not only in a discrete electronic spectrum, but also in built-in polarization charges exhibiting a broken inversion symmetry along the transport direction. Thus, electrons undergo highly asymmetric quantum interference effects with respect to the direction of current flow. By employing doping to counter the broken symmetry, we deterministically control the resonant transmission through GaN/AlN resonant tunneling diodes and experimentally demonstrate the recovery of symmetric resonant tunneling injection across the noncentrosymmetric double-barrier potential.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the tunneling transmission asymmetry problem caused by polarization charges in non - centrosymmetric heterostructures. Specifically, the quantum confinement and built - in polarization charges in these structures break the inversion symmetry, causing electrons to experience highly asymmetric quantum interference effects in different current directions. This results in a significant difference between the forward and reverse tunneling current peaks ($J_{\text{For}}^p / J_{\text{Rev}}^p\approx 10^7$), thus affecting the performance of the device.

To solve this problem, the authors propose to offset this symmetry breaking through doping. They designed and experimentally verified a new gallium nitride/aluminum nitride (GaN/AlN) resonant tunneling diode (RTD), in which silicon donors are introduced through a δ - doping layer to restore the symmetric resonant tunneling injection characteristics. This method can effectively eliminate the asymmetry caused by polarization charges, achieve bidirectionally symmetric quantum interference effects, and improve the intensity and controllability of the tunneling current.

### Key Formulas

1. **Relationship between voltage bias and electric field in a standard double - barrier heterostructure**:
\[
V_B=\frac{1}{2}\frac{\varepsilon_S F_c^2}{qN_d}-F_c\left(\frac{\varepsilon_S}{C_\xi^q}+t_{DB}+t_s\right)-2F_\pi t_b+\frac{E_\xi^0}{q}
\]
where:
- \(V_B\) is the voltage bias,
- \(F_c\) is the collector electric field,
- \(\varepsilon_S\) is the dielectric constant of GaN,
- \(N_d\) is the contact doping concentration,
- \(C_\xi^q\) is the quantum capacitance of the emitter accumulation well,
- \(t_{DB}\) is the total thickness of the double - barrier active region,
- \(t_s\) is the collector spacer layer thickness,
- \(F_\pi = \frac{q\sigma_\pi}{\varepsilon_S}\) is the internal polarization electric field,
- \(E_\xi^0\) is the ground - state energy of the emitter triangular accumulation well.

2. **Relationship between voltage bias and electric field in a δ - doped RTD**:
\[
V_B=-F_c\left(\frac{\varepsilon_S}{C_\xi^q}+t_{DB}+t_s+\frac{\varepsilon_S}{C_\delta^q}\right)-2F_\pi t_b+\frac{E_\xi^0}{q}-\frac{E_\delta^0}{q}-\varepsilon_S\frac{C_\delta^q F_\delta}{q}
\]
where:
- \(C_\delta^q\) is the quantum capacitance of the collector δ - well,
- \(E_\delta^0\) is the ground - state energy of the collector δ - well.

By introducing the δ - doping layer, the authors successfully reduced the width of the collector depletion region, enhanced the coupling strength between the well and the electrode, and thus achieved symmetric resonant tunneling injection characteristics. This method not only improves the intensity of the tunneling current but also enhances the electrostatic control ability, making the device exhibit symmetric I - V characteristics and negative differential conductance (NDC) under both forward and reverse biases.