Abstract:Recent studies have revealed the significance of electron-phonon interaction (EPI) in phonon transport at intermediate temperatures. In some metals, the EPI can even dominate over the anharmonic phonon-phonon (ph-ph) scattering, leading to an anomalous phonon transport regime in which the lattice thermal conductivity κL becomes nearly temperature (T) independent in contrast to the usual 1/T dependence. However, the experimental verification of this anomalous transport regime is very challenging due to the difficulty in separating the phonon contributions from the dominating electron ones to the measured total thermal conductivity in metals. In this work, using first-principles calculations, we predict that in bilayer graphene, the phonon transport can be driven to the anomalous regime by tuning the doping level. At high doping levels close to the Van Hove singularity, the EPI can result in a fivefold reduction of κL at room temperature, and κL becomes T independent. This anomalous behavior is found to have its origin in three aspects: (i) mirror symmetry breaking enables direct coupling between flexural phonons, the dominant carriers of κL, and electrons; (ii) dominance of normal processes in the anharmonic ph-ph scattering facilitates the EPI to be more prominent; (iii) dominance of these normal ph-ph processes induces the indirect effect of EPI on κL. This is distinct from monolayer graphene, where the mirror symmetry prohibits the direct scattering of the flexural phonons by electrons and only the indirect EPI affects κL. This work gives insight into the manipulation of heat conduction via externally induced EPI in two-dimensional materials in which mirror symmetry breaks and normal processes dominate the ph-ph scattering.

Acoustic phonon contribution to the resistivity of twisted bilayer graphene

Quantifying the charge carrier interaction in metallic twisted graphene superlattices

Transport measurements in twisted bilayer graphene: Electron-phonon coupling and Landau level crossing

Revisiting Phonon-Phonon Scattering in Single-Layer Graphene

First-principles electron-phonon interactions and electronic transport in large-angle twisted bilayer graphene

The kinetic theory of ultra-subsonic fermion systems and applications to flat band magic angle twisted bilayer graphene

Electron-phonon and electron-electron interaction effects in twisted bilayer graphene

Effect of out-of-plane acoustic phonons on the thermal transport properties of graphene

Electron-K-Phonon Interaction In Twisted Bilayer Graphene

Understanding Phonon Thermal Transport in Twisted Bilayer Graphene

Temperature dependent resistivity in bilayer graphene due to flexural phonons

Electron-phonon coupling in a magic-angle twisted-bilayer graphene device

Tuning the phonon transport in bilayer graphene to an anomalous regime dominated by electron-phonon scattering

Optical phonons in twisted bilayer graphene with gate-induced asymmetric doping

Hartree theory calculations of quasiparticle properties in twisted bilayer graphene

Giant twist-angle dependence of thermal conductivity in bilayer graphene originating from strong interlayer coupling

Graphene resistivity in diffusive limit due to scalar and vector potential electron-phonon scattering

Phononic thermal transport along graphene grain boundaries

Size and Boundary Scattering Controlled Contribution of Spectral Phonons to the Thermal Conductivity in Graphene Ribbons

Transport coefficients of graphene: Interplay of impurity scattering, Coulomb interaction, and optical phonons