Intrinsic auxeticity and mechanical anisotropy of Si9C15 siligraphene

Jianli Zhou,Jian Li,Jin Zhang
DOI: https://doi.org/10.48550/arXiv.2302.04409
2023-02-09
Abstract:The graphene-like two-dimensional (2D) silicon carbide or siligraphene has attracted remarkable attentions, owing to its fascinating physical properties. Nevertheless, the first high-quality siligraphene, i.e., monolayer Si9C15 was synthesised very recently, which exhibits an excellent semiconducting behaviour. In this work, we investigate the mechanical properties of Si9C15 siligraphene by using atomistic simulations including density functional theory (DFT) calculations and molecular dynamics (MD) simulations. Both methods confirm the existence of intrinsic negative Poisson's ratios in Si9C15 siligraphene, which, as illustrated by MD simulations, is attributed to the tension-induced de-wrinkling behaviours of its intrinsic rippled configuration. Different de-wrinkling behaviours are observed in different directions of Si9C15 siligraphene, which result in the anisotropy of its auxetic property. The fracture property of Si9C15 siligraphene is similarly anisotropic, but relatively large fracture strains are observed in different orientations, indicating the stretchability of Si9C15 siligraphene. The stretchability together with the strain-sensitive bandgap of Si9C15 siligraphene observed in DFT calculations indicates the effectiveness of strain engineering in modulating its electronic property. The combination of unique auxetic property, excellent mechanical property and tunable electronic property may render Si9C15 siligraphene a novel 2D material with multifunctional applications.
Materials Science
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to explore the mechanical properties of the recently synthesized Si₉C₁₅ siligraphene, especially its inherent negative Poisson's ratio (auxeticity) and mechanical anisotropy. Specifically, the researchers use density functional theory (DFT) calculations and molecular dynamics (MD) simulations to explore the following aspects in detail: 1. **Existence and mechanism of the inherent negative Poisson's ratio**: - Through DFT calculations and MD simulations, the researchers have confirmed the existence of an inherent negative Poisson's ratio in Si₉C₁₅ siligraphene. - This negative Poisson's ratio is caused by the wrinkling - removal behavior induced by uniaxial stretching. That is, during the stretching process, the corrugated structure of the material gradually flattens, thus showing lateral expansion rather than contraction. 2. **Mechanical anisotropy**: - It has been found that the wrinkling - removal behavior of Si₉C₁₅ siligraphene is different in different directions, which leads to the anisotropy of its negative Poisson's ratio. - Specifically, in different loading directions, the mechanical responses of the material (such as Young's modulus, Poisson's ratio, etc.) show significant differences. 3. **Fracture behavior and its anisotropy**: - The fracture behavior of Si₉C₁₅ siligraphene also shows anisotropy, but the fracture strains in different directions are relatively large, indicating that it has a certain stretchability. - The influence of temperature on the fracture strength and fracture strain has also been studied. The results show that an increase in temperature will lead to a decrease in the fracture strength and fracture strain, and the ZZ direction is more sensitive to temperature changes. 4. **Effect of strain engineering on electronic properties**: - The research also explored the effect of strain on the electronic bandgap of Si₉C₁₅ siligraphene. It was found that a moderate strain can significantly adjust its bandgap, making it change from a direct bandgap to an indirect bandgap, which is of great significance for its application in two - dimensional optoelectronic devices. In summary, this paper aims to comprehensively understand the mechanical properties of Si₉C₁₅ siligraphene, including its unique negative Poisson's ratio and mechanical anisotropy, as well as the influence of these characteristics on its potential applications. By combining DFT calculations and MD simulations, the researchers not only verified these characteristics but also revealed the physical mechanisms behind them.