Abstract:III-nitrides and related alloys are widely used for optoelectronics and as acoustic resonators. Ferroelectric wurtzite nitrides are of particular interest because of their potential for direct integration with Si and wide bandgap semiconductors and unique polarization switching characteristics; such interest has taken off since the first report of ferroelectric Al1−xScxN alloys. However, the coercive fields needed to switch polarization are on the order of MV/cm, which are 1–2 orders of magnitude larger than oxide perovskite ferroelectrics. Atomic-scale point defects are known to impact the dielectric properties, including breakdown fields and leakage currents, as well as ferroelectric switching. However, very little is known about the native defects and impurities in Al1−xScxN and their effect on the dielectric and ferroelectric properties. In this study, we use first-principles calculations to determine the formation energetics of native defects and unintentional oxygen incorporation and their effects on the polarization switching barriers in Al1−xScxN alloys. We find that nitrogen vacancies are the dominant native defects, and unintentional oxygen incorporation on the nitrogen site is present in high concentrations. They introduce multiple mid-gap states that can lead to premature dielectric breakdown and increased temperature-activated leakage currents in ferroelectrics. We also find that nitrogen vacancy and substitutional oxygen reduce the switching barrier in Al1−xScxN at low Sc compositions. The effect is minimal or even negative (increases barrier) at higher Sc compositions. Unintentional defects are generally considered to adversely affect ferroelectric properties, but our findings reveal that controlled introduction of point defects by tuning synthesis conditions can instead benefit polarization switching in ferroelectric Al1−xScxN at certain compositions.

Oxygen defect dominated photoluminescence emission of Sc x Al 1− x N grown by molecular beam epitaxy

Oxygen Defect Dominated Photoluminescence Emission of ScxAl1−xN Grown by Molecular Beam Epitaxy

Defects and Oxygen Impurities in Ferroelectric Wurtzite Al$_{1-x}$Sc$_x$N Alloys

Defects and oxygen impurities in ferroelectric wurtzite Al1− x Sc x N alloys

Role of Oxygen on Structure and Piezoelectric Properties of Al0.65Sc0.35 N Thin Films

Molecular Beam Epitaxy and Characterization of Wurtzite ScxAl1−xN

High-Quality Single Crystalline Sc0.37Al0.63N Thin Films Enabled by Precise Tuning of III/N Atomic Flux Ratio during Molecular Beam Epitaxy

Annihilation and Regeneration of Defects in (112̅2) Semipolar AlN via High-Temperature Annealing and MOVPE Regrowth

Below bandgap photoluminescence of an AlN crystal: Co-existence of two different charging states of a defect center

Improving Reproducibility of Sputter Deposited Ferroelectric Wurtzite Al0.6Sc0.4N Films using In-situ Optical Emission Spectrometry

Suppressing the luminescence of V-related point-defect in AlGaN grown by MOCVD on HVPE-AlN

The influence of defects and impurities in polycrystalline AlN films on the violet and blue photoluminescence

Understanding the Local and Electronic Structures toward Enhanced Thermal Stable Luminescence of CaAlSiN3:Eu2+

Single-Photon Emission from Point Defects in Aluminum Nitride Films

Molecular Beam Epitaxial Growth and Physical Properties of AlN/GaN Superlattices with an Average 50% Al Composition

Cathodoluminescence studies of point defects in aluminum nitride

Towards higher electro-optic response in AlScN

On the surface oxidation and band alignment of ferroelectric Sc0.18Al0.82N/GaN heterostructures

Deciphering the photophysical properties of near-infrared quantum emitters in AlGaN films by transition dynamics

Photoluminescence Spectroscopy Of Nearly Defect-Free Inn Microcrystals Exhibiting Nondegenerate Semiconductor Behaviors

Point Defects in Monolayer h -AlN as Candidates for Single-Photon Emission