Abstract:We report the photoluminescence of monocrystalline silicon irradiated by femtosecond pulsed laser in different environments (deionized water and air) and energy density conditions. The field emission scanning electron microscope (FESEM) measurement results show the formation of completely different morphologies on silicon surface in different environments. A stripe-like microstructure on the silicon surface in air is formed in contrast to the smaller and coral-like microstructure generated in the deionized water. By using the energy dispersive spectroscopy (EDS) we find that silicon and oxygen is the main elemental composition on femtosecond laser-induced silicon surface, and the content of oxygen on the sample surface formed in the deionized water is nearly four times larger than that in air. The Si-Si bond (610 cm-1) and Si-O-Si bond vibrations (1105 cm-1) are detected mainly in the Fourier transform infrared transmission spectrum (FT-IR). The photoluminescence (PL) spectroscopy measurement results show that visible blue luminescence is observed both from the silicon ablated in the deionized water and in air, while the shape and position of the emitted luminescence peak are substantially the same. However, the luminescence intensity of silicon etched in the deionized water is close to 3 times stronger than that in air when the photoluminescence is excited at respective most suitable excitation wavelength. A more interesting phenomenon is that the position and shape of the photoluminescence peak in the visible range are basically not changed. The studies confirm that oxygen plays an important role in photoluminescence enhancement. Photoluminescence may be mainly generated by the formation of oxygen defects SiOx and the content of low oxide SiOx (x<2) determines the luminous intensity level.

Enhanced energy deposition and carrier generation in silicon induced by two-color intense femtosecond laser pulses

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

Ultrafast energy absorption and photoexcitation of bulk plasmon in crystalline silicon subjected to intense near-infrared ultrashort laser pulses

Excitation of the electronic subsystem of silicon by femtosecond laser irradiation

Modelling ultrafast non-equilibrium carrier dynamics and relaxation processes upon irradiation of hexagonal Silicon-Carbide with femtosecond laser pulses

Saturable absorption in highly excited silicon and its suppression at the surface

Blueshift of high-order harmonic generation in crystalline silicon subjected to intense femtosecond near-infrared laser pulse

The influence of ultrafast temporal energy regulation on the morphology of Si surfaces through femtosecond double pulse laser irradiation

Energy Transfer Between Femtosecond Laser and Silicon Carbide

Ultrafast thermalization dynamics in silicon wafer excited by femtosecond laser double-pulse vortex beam

Numerical Investigation of the Kinetics of Non-Equilibrium Phase Transitions in Silicon Induced by an Ultra-Short Laser Pulse

Tuned ionic mobility by Ultrafast-laser pulses in Black Silicon

Effect of high-power nanosecond and femtosecond laser pulses on silicon nanostructures

A Hybrid Method for Integrated Atomistic-Continuum Simulation of Ultrashort-Pulsed Laser Interaction with Semiconductors

Thermal and non-thermal ablation mechanisms in crystalline silicon by femtosecond laser pulses: classical approach of the carrier density two temperature model

Dual-wavelength femtosecond laser-induced low-fluence single-shot damage and ablation of silicon

Photoinduced Multiple Microchannels Inside Silicon Produced by a Femtosecond Laser

Examining the Transition from Multiphoton to Optical-Field Photoemission From Silicon Nanostructures

Photoluminescence of Monocrystalline Silicon Irradiated by Femtosecond Pulsed Laser

Evolution of Microstructures on Silicon Induced by Femtosecond Laser with Multiple Pulses

Femtosecond-Laser-Ablation Dynamics in Silicon Revealed by Transient Reflectivity Change