Effects of Crystalline Disorder on Interfacial and Magnetic Properties of Sputtered Topological Insulator/Ferromagnet Heterostructures

Nirjhar Bhattacharjee,Krishnamurthy Mahalingam,Adrian Fedorko,Alexandria Will-Cole,Jaehyeon Ryu,Michael Page,Michael McConney,Hui Fang,Don Heiman,Nian Xiang Sun

DOI: https://doi.org/10.1021/acsaelm.2c00523

2022-05-20

Abstract:Thin films of Topological insulators (TIs) coupled with ferromagnets (FMs) are excellent candidates for energy-efficient spintronics devices. Here, the effect of crystalline structural disorder of TI on interfacial and magnetic properties of sputter-deposited TI/FM, Bi2Te3/Ni80Fe20, heterostructures is reported. Ni and a smaller amount of Fe from Py was found to diffuse across the interface and react with Bi2Te3. For highly crystalline c-axis oriented Bi2Te3 films, a giant enhancement in Gilbert damping is observed, accompanied by an effective out-of-plane magnetic anisotropy and enhanced damping-like spin-orbit torque (DL-SOT), possibly due to the topological surface states (TSS) of Bi2Te3. Furthermore, a spontaneous exchange bias is observed in hysteresis loop measurements at low temperatures. This is because of an antiferromagnetic topological interfacial layer formed by reaction of the diffused Ni with Bi2Te3 which couples with the FM, Ni80Fe20. For increasing disorder of Bi2Te3, a significant weakening of exchange interaction in the AFM interfacial layer is found. These experimental results Abstract length is one paragraph.

Materials Science,Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to explore the influence of crystal structure disorder on the interface and magnetic properties of sputter - deposited topological insulator/ferromagnet heterojunctions. Specifically, the interactions between Bi₂Te₃ films with different crystallinities and Ni₈₀Fe₂₀ layers were studied, as well as how these interactions affect the magnetic properties and spin - orbit torque (SOT) characteristics of the materials. By changing the crystallinity of Bi₂Te₃ films, the authors hope to understand how crystal structure disorder affects the interface reactions, magnetic anisotropy, Gilbert damping coefficient and SOT effect of these heterojunctions, thereby providing theoretical basis and technical support for the development of high - performance spintronic devices.

The key findings mentioned in the paper include:
1. **Interface reaction**: Ni and a small amount of Fe diffuse from the Ni₈₀Fe₂₀ layer to the Bi₂Te₃ layer and undergo a solid - state chemical reaction with it to form an interface layer.
2. **Enhanced magnetic properties**: With the increase in the c - axis orientation of the Bi₂Te₃ film, significant enhancement of Gilbert damping, out - of - plane magnetic anisotropy and enhanced damping - like spin - orbit torque (DL - SOT) were observed.
3. **Exchange bias effect**: At low temperatures, a spontaneous exchange bias effect was observed, which is due to the formation of an antiferromagnetic (AFM) topological interface layer formed by the reaction of diffused Ni with Bi₂Te₃.
4. **Influence of structural disorder**: With the increase in the structural disorder of the Bi₂Te₃ film, the exchange interaction of the interface layer is significantly weakened, indicating that high - crystallinity Bi₂Te₃ is crucial for maintaining strong exchange interactions.
5. **Spin - charge conversion efficiency**: Although polycrystalline disordered Bi₂Te₃ samples exhibit lower spin - charge conversion efficiency, samples with smaller grains can still maintain relatively high spin - charge conversion efficiency due to the quantum confinement effect.

These findings not only help to understand the interface physics of topological insulator - ferromagnet heterojunctions, but also provide important experimental data and theoretical guidance for the future design and preparation of high - performance spintronic devices.