Direct probing of phonon mode specific electron-phonon scatterings in two-dimensional semiconductor transition metal dichalcogenides: Symmetry and Berry phase

Duk Hyun Lee,Sang-Jun Choi,Hakseong Kim,Yong-Sung Kim,Suyong Jung

DOI: https://doi.org/10.1038/s41467-021-24875-2

2022-03-22

Abstract:Electron-phonon scatterings in solid-state systems are pivotal processes in determining many key physical quantities such as charge carrier mobilities and thermal conductivities. Here, we report on the direct probing of phonon mode specific electron-phonon scatterings in layered semiconducting transition metal dichalcogenides WSe2, MoSe2, WS2, and MoS2 through inelastic electron tunneling spectroscopy measurements, quantum transport simulations, and density functional calculation. We experimentally and theoretically characterize momentum-conserving single- and two-phonon electron-phonon scatterings involving up to as many as eight individual phonon modes in mono- and bilayer films, among which transverse, longitudinal acoustic and optical, and flexural optical phonons play significant roles in quantum charge flows. Moreover, we observe that two-phonon inelastic electron tunneling processes, which are confirmed to be generic in all four semiconducting layers, are governed by layer-number dependent symmetry, quantum interference, and geometric Berry phase.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The key problem that this paper attempts to solve is to directly detect electron - phonon scattering of specific phonon modes in two - dimensional semiconductor transition - metal dichalcogenides (TMDs) by experimental and theoretical means. Specifically, the authors studied the following issues:

1. **Direct Detection of Electron - Phonon Scattering**:
- Directly detect electron - phonon scattering of specific phonon modes in WSe₂, MoSe₂, WS₂ and MoS₂ through inelastic electron tunneling spectroscopy (IETS) measurement, quantum transport simulation and density - functional calculation.
- Study single - phonon and two - phonon scattering processes, involving as many as eight different phonon modes.

2. **Influence of Layer - Dependent Symmetry and Berry Phase**:
- Explore how the two - phonon inelastic electron tunneling process is regulated by layer - number - dependent symmetry, quantum interference and geometric Berry phase.
- Observe that the two - phonon scattering process is普遍存在 in all four semiconductor layers, and these processes are dominated by layer - number - dependent symmetry, quantum interference and Berry phase.

3. **High - Energy Inelastic Electron Tunneling Process**:
- Explore high - energy (40 meV ≤ |eVb| ≤ 70 meV) inelastic electron tunneling processes and find that these processes show significant differences in monolayer and bilayer materials.
- Find that the high - energy two - phonon scattering signal is regulated by quantum interference and Berry phase, especially more明显 in bilayer materials.

4. **Universality of Different Materials**:
- Verify that these electron - phonon scattering characteristics are applicable not only to WSe₂, but also to other types of TMDs, such as MoS₂, MoSe₂ and WS₂.
- Find that the single - phonon and two - phonon scattering characteristics in these materials are also regulated by layer - number - dependent symmetry and Berry phase.

### Formula Explanation
The formulas involved in the paper are mainly used to describe quantum interference and Berry - phase effects. For example:

- **Momentum Conservation Condition**: \[ k_f = k_i - q - q' \]
- **Berry - Phase Calculation**: \[ \gamma=\frac{1}{2} \Omega \], where \(\Omega\) is the solid angle enclosed by the geometric path connecting the initial state \(k_i\) and the final state \(k_f\) on the Bloch sphere.

Through these studies, the authors revealed the microscopic mechanism of the electron - phonon scattering process in two - dimensional semiconductor materials and provided a new perspective for understanding charge transport in these materials.