Abstract:Electro-optic modulators translate high-speed electronic signals into the optical domain and are critical components in modern telecommunication networks1,2 and microwave-photonic systems3,4. They are also expected to be building blocks for emerging applications such as quantum photonics5,6 and non-reciprocal optics7,8. All of these applications require chip-scale electro-optic modulators that operate at voltages compatible with complementary metal–oxide–semiconductor (CMOS) technology, have ultra-high electro-optic bandwidths and feature very low optical losses. Integrated modulator platforms based on materials such as silicon, indium phosphide or polymers have not yet been able to meet these requirements simultaneously because of the intrinsic limitations of the materials used. On the other hand, lithium niobate electro-optic modulators, the workhorse of the optoelectronic industry for decades9, have been challenging to integrate on-chip because of difficulties in microstructuring lithium niobate. The current generation of lithium niobate modulators are bulky, expensive, limited in bandwidth and require high drive voltages, and thus are unable to reach the full potential of the material. Here we overcome these limitations and demonstrate monolithically integrated lithium niobate electro-optic modulators that feature a CMOS-compatible drive voltage, support data rates up to 210 gigabits per second and show an on-chip optical loss of less than 0.5 decibels. We achieve this by engineering the microwave and photonic circuits to achieve high electro-optical efficiencies, ultra-low optical losses and group-velocity matching simultaneously. Our scalable modulator devices could provide cost-effective, low-power and ultra-high-speed solutions for next-generation optical communication networks and microwave photonic systems. Furthermore, our approach could lead to large-scale ultra-low-loss photonic circuits that are reconfigurable on a picosecond timescale, enabling a wide range of quantum and classical applications5,10,11 including feed-forward photonic quantum computation.

Ultra-high-linearity integrated lithium niobate electro-optic modulators

High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

Strong Nonlinear Optics In On-Chip Coupled Lithium Niobate Microdisk Photonic Molecules

Broadband Highly Efficient Nonlinear Optical Processes in On-Chip Integrated Lithium Niobate Microdisk Resonators of Q-factor above 108

High-Frequency and High-Linearity Lithium Niobate Electro-optic Modulator

High-Linearity Dual-Parallel Mach–Zehnder Modulators in Thin-Film Lithium Niobate

High-Speed Electro-Optic Modulators Based on Thin-Film Lithium Niobate

Integrated lithium niobate electro-optic modulators operating at CMOS-compatible voltages

Lithium niobate photonic-crystal electro-optic modulator

High-efficiency Thin-Film Lithium Niobate Modulator with Highly Confined Optical Modes

Monolithic Thin Film Lithium Niobate Electro-Optic Modulator with over 110 GHz Bandwidth

Ultra-high Efficiency Electro-optic Modulator on Thin-film Lithium Niobate

High-speed electro-optic modulator based on silicon nitride loaded lithium niobate on an insulator platform

High-efficiency Electro-Optic Modulators in Lithium Niobate on Insulator

Heterogeneous Silicon-on-lithium Niobate Electro-Optic Modulator for 100-Gbaud Modulation

Hybrid Silicon Photonic-Lithium Niobate Electro-Optic Mach-Zehnder Modulator Beyond 100 GHz Bandwidth

Ultra-high extinction dual-output thin-film lithium niobate intensity modulator

Lithium niobate thin film electro-optic modulator

High-performance Coherent Optical Modulators based on Thin-film Lithium Niobate Platform

Thin-film lithium-niobate-on-insulator modulators at a wavelength of 1064nm for high-power applications

110-GHz bandwidth integrated lithium niobate modulator without direct lithium niobate etching