Emergence of Intergranular Tunneling Dominated Negative Magnetoresistance in Helimagnetic Manganese Phosphide Nanorod Thin Films

B. Muchharla,R. P. Madhogaria,D. DeTellem,C. M. Hung,A. Chanda,A. T. Duong,P. T. Huy,M. T. Trinh,S. Cho,S. Witanachchi,M. H. Phan
DOI: https://doi.org/10.48550/arXiv.2202.07915
2022-02-16
Abstract:Helical magnets are emerging as a novel class of materials for spintronics and sensor applications; however, research on their charge and spin transport properties in a thin film form is less explored. Herein, we report the temperature and magnetic field dependent charge transport properties of a highly crystalline MnP nanorod thin film over a wide temperature range (2-350 K). The MnP nanorod films of 100 nm thickness were grown on Si substrates at 500 oC using molecular beam epitaxy. The temperature dependent resistivity data exhibits a metallic behavior over the entire measured temperature range. However, large negative magnetoresistance of up to 12% is observed below 50 K at which the system enters a stable helical (screw) magnetic state. In this temperature regime, the MR(H,T) dependence seems to show a magnetic field manipulated phase coexistence. The observed magnetoresistance is dominantly governed by the intergranular spin dependent tunneling mechanism. These findings pinpoint a correlation between the transport and magnetism in this helimagnetic system.
Materials Science,Applied Physics
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