Tin disulfide nanoflowers and nitrogen doped graphene oxide based extended gate field effect transistor as immunosensors

Dhananjayan Nathiya,Dilip K. Agarwal,Karuppasamy Gurunathan,Subbiah Alwarappan,Jeyaraj Wilson
DOI: https://doi.org/10.1016/j.microc.2024.109904
IF: 5.304
2024-01-29
Microchemical Journal
Abstract:Miniaturized biosensor design is widely preferred for its application in integrated platform to provide rapid and sensitive diagnosis. However, there are only few reports which employ extended gate field effect transistors (EG-FET) for immunosensing application. Herein, we designed EG-FET using four level lithography techniques. Further, the gate layer (Au/Ti) of device has been modified with Tin disulfide nanoflowers (SnS 2 ) and nitrogen doped graphene oxide (N-GO) hybrid composite for enhanced electrical sensing. The as-prepared SnS 2 and N-GO based nanocomposite (SnS 2 /N-GO) was characterized by various techniques. The designed SnS 2 /N-GO based EG-FET was employed as an immunosensor to detect HIgG using anti-HIgG antibody. Under optimum conditions, our miniaturized immunosensor demonstrated the detection of HIgG as low as 4.81 ng/mL. The proposed immunosensor exhibited excellent sensitivity, selectivity and reproducibility towards HIgG detection, thereby suitable for a reliable integrated biosensing platform which can detect protein concentration in real samples for clinical diagnostics.
chemistry, analytical
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