Abstract:We demonstrate the use of radio-frequency (rf) resonators to measure the capacitance of nano-scale semiconducting devices in field-effect transistor configurations. The rf resonator is attached to the gate or the lead of the device. Consequently, tuning the carrier density in the conducting channel of the device affects the resonance frequency, quantitatively reflecting its capacitance. We test the measurement method on InSb and InAs nanowires at dilution-refrigerator temperatures. The measured capacitances are consistent with those inferred from the periodicity of the Coulomb blockade of quantum dots realized in the same devices. In an implementation of the resonator using an off-chip superconducting spiral inductor we find sensitivity values reaching down to 75~zF/$\sqHz$ at 1~kHz measurement bandwidth, and noise down to 0.45~aF at 1~Hz bandwidth. We estimate the sensitivity of the method for a number of other implementations. In particular we predict typical sensitivity of about 40~zF/$\sqHz$ at room temperature with a resonator comprised of off-the-shelf components. Of several proposed applications, we demonstrate two: the capacitance measurement of several identical 80~nm-wide gates with a single resonator, and the field-effect mobility measurement of an individual nanowire with the gate capacitance measured in-situ.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to develop a highly sensitive radio - frequency (rf) resonant circuit method for measuring the capacitance of micron - and nano - scale semiconductor devices. Specifically, the author achieved accurate measurement of nano - volt - level capacitance changes by connecting an rf resonator to the source or gate in a field - effect transistor (FET) configuration. This method not only improves the measurement bandwidth but also significantly reduces the influence of 1/f noise, making the measurement mainly limited by the smaller Johnson - Nyquist noise, amplifier noise, and the noise of the device itself. ### Main problems 1. **Improving the sensitivity and bandwidth of capacitance measurement**: Traditional low - frequency capacitance - voltage (C - V) measurement methods are limited by bandwidth and noise when measuring nano - scale devices. This research proposes a new method based on rf resonators, which can achieve sub - attofarad - level sensitivity in a low - temperature environment. 2. **Verifying the accuracy of the measurement method**: The author verified the accuracy of this method by comparing the capacitance values extracted from the resonance frequency shift and the Coulomb blockade periodicity. The experimental results show that the capacitance values measured by the two methods are very close, proving the effectiveness of the rf resonator method. 3. **Application expansion**: This method can be used not only to measure the capacitance of a single nanowire device but also can be extended to the characterization of multi - gate structures, such as quantum dot arrays, thus providing support for applications such as spin qubits. In addition, this method can also be combined with conductance measurement to extract the mobility of nanowire devices. ### Formula summary - **Resonance frequency formula**: \[ f_0=\frac{1}{2\pi\sqrt{LC}} \] where $L$ is the inductance and $C$ is the capacitance. - **Capacitance change formula**: \[ C_G = \left(\frac{1}{(2\pi f_{\text{depl}}^0)^2 L}-\frac{1}{(2\pi f_{\text{acc}}^0)^2 L}\right) \] or approximately: \[ C_G\approx-\frac{\Delta f_0}{2\pi^2(f_{\text{depl}}^0)^3 L} \] where $f_{\text{depl}}^0$ and $f_{\text{acc}}^0$ are the resonance frequencies when carriers are depleted and accumulated respectively, and $\Delta f_0$ is the frequency shift. ### Application examples - **Multi - gate capacitance measurement**: A single rf resonator can be used to measure the capacitances of multiple gates simultaneously, which is very useful for the development and characterization of multi - gate structures (such as quantum dot arrays). - **Mobility measurement**: By combining with conductance measurement, the mobility of nanowire devices can be extracted from the capacitance change. - **Electron compressibility measurement**: The rf resonator method can be used to probe the electron compressibility of mesoscopic systems, which is of great significance for research in fields such as Luttinger liquids and the quantum Hall effect. In conclusion, this research has developed a highly sensitive capacitance measurement method and verified its effectiveness in various application scenarios.

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