Abstract:The implementation of a quantum computer requires a qubit-specific measurement capability to read-out the final state of a quantum system. The model of spin dependent tunneling followed by charge readout has been highly successful in enabling spin qubit experiments in all-electrical, semiconductor based quantum computing. As experiments grow more sophisticated, and head towards multiple qubit architectures that enable small scale computation, it becomes important to consider the charge read-out overhead. With this in mind, Reilly et al. demonstrated a gate readout scheme in a GaAs double quantum dot that removed the need for an external charge sensor. This readout, which achieved sensitivities of order me/$\sqrt(Hz)$, was enabled by using a resonant circuit to probe the complex radio-frequency polarisability of the double quantum dot. However, the ultimate performance of this technology and the noise sources that limit it remain to be determined. Here, we investigate a gate-based readout scheme using a radio-frequency resonant circuit strongly coupled to a double quantum at the corner states of a silicon nanowire transistor. We find a significantly improved charge sensitivity of 37 $\mu$e/$\sqrt(Hz)$. By solving the dynamical master equation of the fast-driven electronic transitions we quantify the noise spectral density and determine the ultimate charge and phase sensitivity of gate-based read-out. We find comparable performance to conventional charge sensors and fundamental limits of order ne/$\sqrt(Hz)$ and $\mu$rad/$\sqrt(Hz)$, with the gate-based sensor improving on standard detection for certain device parameters. Our results show that, especially in state-of-the-art silicon qubit architectures, charge detection by probing the complex polarisability has advantages in terms of reducing the readout overhead but also in terms of the absolute charge sensitivity.

Radio-frequency C-V measurements with sub-attofarad sensitivity

Measurement of the combined quantum and electrochemical capacitance of a carbon nanotube

Experimental Characterisation and Modelling of On-Chip Capacitors and Resistors on GaAs Substrates

A New Capacitance-to-Frequency Converter for On-Chip Capacitance Measurement and Calibration in CMOS Technology

Rapid Microwave-Only Characterization and Readout of Quantum Dots Using Multiplexed Gigahertz-Frequency Resonators

Quantitative Measurement of Local Conductivity of SnO2 Nanobelt Field Effect Transistor Utilizing Microwave Atomic Force Microscopy

Capacitance-voltage (C-V) Characterization in Very Thin Suspended Silicon Nanowires for NEMS-CMOS Integration in 160nm Silicon-on-Insulator (SOI)

Quantitative Measurement of Submicrometre Electrical Conductivity

4.2 K sensitivity-tunable radio frequency reflectometry of a physically defined p-channel silicon quantum dot

Measuring the complex admittance of a carbon nanotube double quantum dot

Fast measurement of carbon nanotube resonator amplitude with a heterojunction bipolar transistor

Accessing nanomechanical resonators via a fast microwave circuit

Chip Level Measurement Technique for Capacitive RF Micromechanical Resonators

Compact inductor-capacitor resonators at sub-gigahertz frequencies

High Precision, Low Excitation Capacitance Measurement Methods from 10 Mk to Room Temperature

High Precision, Low Excitation Capactiance Measurement Methods from 10 mK- to Room-Temperature

A high-sensitivity gate-based charge sensor in silicon

Ultrasensitive Resonant Electrometry Utilizing Micromechanical Oscillators

Nanoscale Capacitance and Capacitance-Voltage Curves for Advanced Characterization of Electrical Properties of Si and GaN Structures Using Scanning Microwave Impedance Microscopy

Radio-frequency Transmission Properties of Carbon Nanotubes in a Field-Effect Transistor Configuration

A high frequency SiC nanobeam resonator with ultra-sensitivity