Role of Noise in Nanostructure Formation: A Theoretical Investigation of Quantum Dots and Quantum Dot Molecules

Monika Dhankhar,Madhav Ranganathan

DOI: https://doi.org/10.1063/5.0073670

2021-08-15

Abstract:We theoretically model the formation of quantum dots(QDs) and quantum dot molecules(QDMs) in silicon germanium heteroepitaxy by explicitly incorporating the role of noise in a continuum theory for surface evolution in molecular beam epitaxy. Using the connection between flux and noise, we explain how changing flux can lead to a transition from QD to QDM formation, as seen in experiments. In these systems we show a dual role of noise in nanostructure growth; one where it promotes formation of QDMs via pit nucleation, and another where it curtails QDM formation due to stochastic effects.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to understand the role of noise in the formation of nanostructures, especially the formation mechanisms of quantum dots (QDs) and quantum dot molecules (QDMs) during the heteroepitaxial growth of silicon - germanium. Specifically, the author explored the following issues through theoretical modeling:

1. **The influence of noise on the formation of quantum dots and quantum dot molecules**:
- The author studied how the fluctuations in the deposition flux (i.e., noise) during the molecular beam epitaxy (MBE) process affect the formation of quantum dots and quantum dot molecules.
- They explained how changing the deposition flux can lead to the transition from the formation of quantum dots to that of quantum dot molecules and revealed the dual role of noise in this transition.

2. **The dual role of noise**:
- **Promoting the formation of quantum dot molecules**: Noise can promote the formation of quantum dot molecules through pit nucleation.
- **Inhibiting the formation of quantum dot molecules**: Noise can also inhibit the formation of quantum dot molecules due to random effects.

3. **The combination of experimental observations and theoretical models**:
- The paper combined experimental observations and theoretical simulations to verify the specific influence of noise on the formation of nanostructures under different conditions.
- For example, at a high deposition rate, noise can cause randomly distributed pits to appear on the surface, and these pits eventually evolve into quantum dot molecules; while under low - noise conditions, quantum dots may be formed instead of quantum dot molecules.

4. **The universality of the heteroepitaxial system**:
- Although the research mainly focused on the Si - Ge system, the author pointed out that their model is general and applicable to other strained heteroepitaxial systems.

### Formula summary

The key formulas involved in the paper include:

- **Surface height evolution equation**:
\[
\frac{\partial h}{\partial t}=f_{\text{dep}}+\Delta\left(-[1 + \gamma_n(\hat{n})+\gamma_h(h)]\Delta h+\left[1-\frac{1}{2}|\nabla h|^2\right]\frac{\partial \gamma_h}{\partial h}-h_{xx}\frac{\partial^2\gamma_n}{\partial h_x^2}-2h_{xy}\frac{\partial \gamma_n}{\partial h_x\partial h_y}-h_{yy}\frac{\partial^2\gamma_n}{\partial h_y^2}-2(h_xh_{xx}-h_yh_{xy})\frac{\partial \gamma_n}{\partial h_x}-2(h_xh_{xy}+h_yh_{yy})\frac{\partial \gamma_n}{\partial h_y}+\epsilon'(x,y)\right)
\]
where \(\gamma_h\) and \(\gamma_n\) are the thickness - dependent and anisotropic surface energy components respectively, \(h\) is the height field, and \(\epsilon'(x,y)\) is the elastic energy density.

- **Definitions of length and time units**:
\[
l_0 = \sqrt{\frac{\gamma_f}{2(1+\nu)\varepsilon_f(0)}}, \quad \tau_0=\frac{l_0^4}{\gamma_fD_s}
\]
where \(\nu\) is the Poisson ratio, \(D_s\) is the surface diffusion coefficient, and \(\gamma_f\) is the surface energy of a flat film.

- **Probability distribution function of noise**:
\[
p(f_\eta)\propto\exp\left(-\frac{f_\eta^2}{2w_\eta^2}\right)