P. A. Krachkov,I. S. Terekhov
Abstract:The interacting electron and hole in transition-metal dichalcogenides is considered. For investigation of the interaction between electron and hole we obtain the Bethe-Salpeter equation for two interacting Dirac particles. The dependence of a few lowest binding energies of electron and hole on the interaction constant for different potentials is found. We demonstrate that the behavior of the potential at small distances significantly affects on the values of the binding energies. For small interaction constant we have developed the perturbative method of the binding energy calculation. For the largre interaction constant the binding energies are found numerically. The critical values of the interaction constant for the Coulomb potential and exponential potential are found.
What problem does this paper attempt to address?
This paper attempts to solve the problem of electron - hole bound states in transition metal dichalcogenides (TMDs). Specifically, the authors mainly focus on the following aspects:
1. **Establishing an interaction model**: In order to study the interaction between electrons and holes in TMDs materials, the authors derived the Bethe - Salpeter equation (BSE) for two interacting Dirac particles. This equation can describe the bound states formed by electrons and holes.
2. **Calculating the binding energy**: The authors studied the dependence of the lowest several binding energies of electrons and holes on the interaction constant under several different potential functions. They found that the behavior of the potential function at short distances significantly affects the value of the binding energy.
3. **Perturbation method for small interaction constants**: For smaller interaction constants, the authors developed a method based on perturbation theory to calculate the binding energy. This method is suitable for cases where the interaction is weak.
4. **Numerical solution method**: For larger interaction constants, the authors solved the BSE by numerical methods to obtain the binding energy. In addition, they also found the critical interaction constant values of the Coulomb potential and the exponential potential, that is, when these constants reach a certain specific value, the ground - state energy will touch the valence band.
5. **Consideration of correction terms**: The authors specifically considered the influence of high - order correction terms, especially the detailed calculation of the α^4 - order correction terms. These correction terms are very important for more accurately describing the electron - hole interaction.
### Formula summary
- **Hamiltonian**:
\[
\hat{H} = v_F (\tau p_x \sigma_x + p_y \sigma_y) + \frac{\Delta}{2} \sigma_z - \lambda \tau \sigma_z - \frac{1}{2} s_z
\]
where \(v_F=\frac{at}{\hbar}\), \(a\) is the lattice constant, \(t\) is the effective hopping integral, and \(\hbar\) is Planck's constant.
- **Eigenvalue**:
\[
\epsilon^{(\pm)}_{1,1}(p)=\epsilon^{(\pm)}_{-1,-1}=\frac{\lambda}{2}\pm\sqrt{p^2+\left(\frac{\Delta - \lambda}{2}\right)^2}
\]
\[
\epsilon^{(\pm)}_{1,-1}(p)=\epsilon^{(\pm)}_{-1,1}=-\frac{\lambda}{2}\pm\sqrt{p^2+\left(\frac{\Delta + \lambda}{2}\right)^2}
\]
- **Bethe - Salpeter equation**:
\[
\Psi_{i,j}(\epsilon_1, p_1|\epsilon_2, p_2)=-i G^e_{i,n}(\epsilon_1, p_1) G^h_{j,l}(\epsilon_2, p_2)\int\frac{d q d \omega}{(2\pi)^3} V(q)\Psi_{n,l}(\epsilon_1+\omega, p_1+q|\epsilon_2-\omega, p_2 - q)
\]
- **Schrödinger equation form**:
\[
\kappa f(p)=\frac{p^2}{m} f(p)-(\hat{V} f)(p)
\]
- **Binding energy formula**:
\[
\kappa_{n,l}=-\frac{m\alpha^2}{4(n + |l|+ 1/2)^2}
\]
### Conclusion
This paper systematically studied the properties of electron - hole bound states in TMDs materials by deriving and solving the BSE, and proposed effective calculations for different interaction strengths.