Abstract:Rich valleytronics and diverse defect-induced or interlayer pre-bandgap excitonics have been extensively studied in transition metal dichalcogenides (TMDCs), a system with fascinating optical physics. However, more intense high-energy absorption peaks (∼3 eV) above the bandgaps used to be long ignored and their underlying physical origin remains to be unveiled. Here, we employ momentum resolved electron energy loss spectroscopy to measure the dispersive behaviors of the valley excitons and intense higher-energy peaks at finite momenta. Combined with accurate Bethe–Salpeter equation calculations, non-band-nesting transitions at the Q valley and at the midpoint of KM are found to be responsible for the high-energy broad absorption peaks in tungsten dichalcogenides and present spin polarizations similar to A excitons, in contrast with the band-nesting mechanism in molybdenum dichalcogenides. Our experiment–theory joint research will offer insights into the physical origins and manipulation of the intense high-energy excitons in TMDC-based optoelectronic devices.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsnano.1c01868?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsnano.1c01868</a>.Experimental q–E diagram of WS2 and q-EELS of MoSe2 (Figure S1 and S2); theoretically calculated optical absorption, loss function, exciton dispersion, excitonic weights, and oscillator strength of TMDCs (Figure S3–S6); removal of zero-loss peak background in EELS (Figure S7) (<a class="ext-link" href="/doi/suppl/10.1021/acsnano.1c01868/suppl_file/nn1c01868_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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