Layer degree of freedom for excitons in transition metal dichalcogenides

Sarthak Das,Garima Gupta,Kausik Majumdar
DOI: https://doi.org/10.1103/PhysRevB.99.165411
2019-10-07
Abstract:Layered transition metal dichalcogenides (TMDCs) host a variety of strongly bound exciton complexes that control the optical properties in these materials. Apart from spin and valley, layer index provides an additional degree of freedom in a few-layer-thick film. Here we show that in a few-layer TMDC film, the wave functions of the conduction and valence-band-edge states contributing to the K ( K′ ) valley are spatially confined in the alternate layers––giving rise to direct (quasi-)intralayer bright exciton and lower-energy interlayer dark excitons. Depending on the spin and valley configuration, the bright-exciton state is further found to be a coherent superposition of two layer-induced states, one (E type) distributed in the even layers and the other (O type) in the odd layers. The intralayer nature of the bright exciton manifests as a relatively weak dependence of the exciton binding energy on the thickness of the few-layer film, and the binding energy is maintained up to 50 meV in the bulk limit––which is an order of magnitude higher than conventional semiconductors. Fast Stokes energy transfer from the intralayer bright state to the interlayer dark states provides a clear signature in the layer-dependent broadening of the photoluminescence peak, and plays a key role in the suppression of the photoluminescence intensity observed in TMDCs with thickness beyond a monolayer. DOI: https://doi.org/10.1103/PhysRevB.99.165411 ©2019 American Physical Society
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