Improving the doping efficiency of Al in 4H-SiC by co-doping group-IVB elements

Yuanchao Huang,Rong Wang,Yixiao Qian,Yiqiang Zhang,Deren Yang,Xiaodong Pi

DOI: https://doi.org/10.1088/1674-1056/ac20ca

2021-04-21

Abstract:The p-type doping efficiency of 4H silicon carbide (4H-SiC) is rather low due to the large ionization energies of p-type dopants. Such an issue impedes the exploration of the full advantage of 4H-SiC for semiconductor devices. In this letter, we show that co-doping group-IVB elements effectively decreases the ionization energy of the most widely used p-type dopant, i. e., aluminum (Al), through the Coulomb repulsion between the energy levels of group-IVB elements and that of Al in 4H-SiC. Among group-IVB elements Ti has the most prominent effectiveness. Ti decreases the ionization energy of Al by nearly 50%, leading to a value as low as ~ 0.13 eV. As a result, the ionization rate of Al with Ti co-doping is up to ~ 5 times larger than that without co-doping at room temperature when the doping concentration is up to 1018 cm-3. This work may encourage the experimental co-doping of group-IB elements such as Ti and Al to significantly improve the p-type doping efficiency of 4H-SiC.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the low p - type doping efficiency in 4H - SiC (4H - type silicon carbide). Specifically, as a wide - band - gap semiconductor material, 4H - SiC has broad application prospects in the fields of power electronics and radio - frequency electronics. However, due to the high ionization energy (about 0.23 eV) of commonly used p - type dopants (such as aluminum Al), its ionization rate at room temperature is low, usually not exceeding 30%. This not only limits the hole mobility but also causes device reliability problems.

To improve the p - type doping efficiency, researchers proposed a co - doping method, that is, by introducing group IVB elements (such as titanium Ti, zirconium Zr, hafnium Hf) to co - dope with aluminum Al, and using Coulomb repulsion to reduce the ionization energy of aluminum. The experimental results show that Ti is the most effective co - doping element, which can reduce the ionization energy of Al by nearly 50%, making it drop to about 0.13 eV. Therefore, after co - doping, the ionization rate of Al at room temperature can be increased to about 5 times the original value, especially when the doping concentration is \(10^{18} \, \text{cm}^{-3}\), the effect is the most significant.

Through this method, the research team hopes to encourage experimenters to intentionally introduce group IVB elements to co - dope with Al during the preparation process of 4H - SiC materials, so as to significantly improve the p - type doping efficiency and better play the advantages of 4H - SiC in semiconductor devices.