Abstract:The vertical external cavity surface emitting laser (VECSEL) is one of the hottest research fields of semiconductor lasers, due to its high power and good beam quality. However, there are few reports about how to systematically design the active region of VECSEL. In this paper, the gain design of quantum wells, which are the most important region within the VECSEL, is carried out. To achieve low power consumption under high temperature condition, epitaxial structure of the VECSEL is optimized by using the commercial software PICS3D. Firstly, the relationship between the structure of quantum well and the gain is simulated by the k·p method. Then, the gain spectra of quantum wells at different carrier densities and temperatures are compared with each other, and the optimal composition and thickness of quantum well are thus determined. The temperature drift coefficient is 0.36 nm/K, obtained by simulating the drift of the gain peak wavelength at the working temperature. Finally, the gain spectra of quantum wells with five different barriers are compared with each other. The slight blue shift of the gain peak in the quantum well with five different barriers accommodates the different emission thermal drifts of the quantum well at high temperature operation. With the GaAsP barriers on both sides of quantum well the gain characteristics of quantum wells can be improved efficiently. The designed structure is deposited by the MOCVD system. According to the reflection spectrum of the gain chip, measured by ellipsometer, the stop-band over 100 nm is centered at the about 970 nm wavelength, confirming accurate growth of the VECSEL. The 808 nm pump laser is focused on the surface of VECSEL chip at an incident angle from 30° to 50°. The VECSEL light-light characteristics are tested under the output coupling mirror with different reflectivity. The output power of VECSEL with a 97.7% reflectance output coupling mirror reaches 9.82 W at the pumping power of 35 W, without saturating the power curve. By using the external mirrors with different reflectivity, there appears the wavelength shift with the pumping power changing from 0.216 nm/W to 0.16 nm/W. Thus, the internal heating effects are different for VECSEL with different mirrors. The divergence angles at two orthogonal directions are 9.2° and 9.0°, respectively. And the circle profile of optical field shows good symmetry.

500 W Peak Power Cavity Dumped 2-micron GaSb-Based VECSEL

High-power and low-threshold 1200 nm InGaAs/GaAs quantum-wells VECSEL grown by MOCVD

High-power vertical external-cavity surface-emitting laser emitting switchable wavelengths

980Nm High Power Bottom Emitting Vcsels

High output power, single mode, and TEM00 operation of a multiple gain chip VECSEL using a twisted-mode configuration

Intracavity Frequency-Doubled Green Vertical External Cavity Surface Emitting Laser

Design of gain region of high-power vertical external cavity surface emitting semiconductor laser and its fabrication

Efficient single-mode oxide-confined GaAs VCSEL's emitting in the 850-nm wavelength regime

High-power InGaAs/GaAs VCSEL's Two-Dimension Arrays

1310 Nm V-Cavity Semiconductor Laser With 38x100ghz Tuning Range

980Nm Bottom-Emitting Vcsel with an Output Power of 1.95W

Hexagonal Transverse Coupled Cavity VCSEL Redefining the High-Speed Lasers

Switchable two-wavelength emission using vertical external-cavity surface-emitting laser

High-Power Ingaas/Gaas Vcsel'S Two-Dimension Arrays - Art. No. 602816

GeSn/Ge Multiquantum-Well Vertical-Cavity Surface-Emitting p-i-n Structures and Diode Emitters on a 200 mm Ge-on-Insulator Platform

Single-Electrode-Controlled 26x100ghz Wavelength Switching in V-Coupled-Cavity Semiconductor Laser

Narrow-linewidth operation of folded 1178nm VECSEL with twisted-mode cavity

An InGaAs Vertical-Cavity Surface-Emitting Laser Emitting at 1130 nm for Silicon Photonics Application

Room Temperature Continuous Wave Lasing of GaN-based Green Vertical-Cavity Surface-Emitting Lasers

Silicon-integrated short-wavelength hybrid-cavity VCSEL

High-power and high-quality Gaussian beam in VCSEL via anisotropic modes control