Enhanced Thermoelectric Performance of Polycrystalline Si0.8Ge0.2 Alloys through the Addition of Nanoscale Porosity

Hosseini,S. Aria,Romano,Giuseppe,Greaney,P. Alex
DOI: https://doi.org/10.3390/nano11102591
2021-10-13
Abstract:Engineering materials to include nanoscale porosity or other nanoscale structures has become a well-established strategy for enhancing the thermoelectric performance of dielectrics. However, the approach is only considered beneficial for materials where the intrinsic phonon mean-free path is much longer than that of the charge carriers. As such, the approach would not be expected to provide significant performance gains in polycrystalline semiconducting alloys, such as SixGe1-x, where mass disorder and grains provide strong phonon scattering. In this manuscript, we demonstrate that the addition of nanoscale porosity to even ultrafine-grained Si0.8Ge0.2 may be worthwhile. The semiclassical Boltzmann transport equation was used to model electrical and phonon transport in polycrystalline Si0.8Ge0.2 containing prismatic pores perpendicular to the transport current. The models are free of tuning parameters and were validated against experimental data. The models reveal that a combination of pores and grain boundaries suppresses phonon conductivity to a magnitude comparable with the electronic thermal conductivity. In this regime, ZT can be further enhanced by reducing carrier concentration to the electrical and electronic thermal conductivity and simultaneously increasing thermopower. Although increases in ZT are modest, the optimal carrier concentration is significantly lowered, meaning semiconductors need not be so strongly supersaturated with dopants.
Materials Science,Applied Physics
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to improve the thermoelectric performance of polycrystalline Si\(_{0.8}\)Ge\(_{0.2}\) alloy by introducing nano - scale pores. Specifically, the researchers hope to verify whether it is still beneficial to add nano - pores even in the ultra - fine - grained Si\(_{0.8}\)Ge\(_{0.2}\) material. This is because the traditional view holds that for polycrystalline semiconductor alloys such as Si\(_{x}\)Ge\(_{1 - x}\), due to mass disorder and strong phonon scattering provided by grains, the introduction of nano - pores will not significantly improve the performance. However, this paper verifies through modeling and experimental data that adding nano - pores in this material can further reduce the phonon thermal conductivity to a level comparable to the electronic thermal conductivity, thereby increasing the thermoelectric figure of merit ZT to a certain extent. In addition, by reducing the carrier concentration to simultaneously increase the thermoelectric potential, the ZT value can be further increased while maintaining good electrical conductivity. Although the increase in ZT is limited, the optimal carrier concentration is significantly reduced, which means that these semiconductors do not need to be over - doped, thereby potentially reducing costs and increasing tolerance to overheating and microstructure evolution.