Abstract:All-electric magnetization manipulation at low power is a prerequisite for a wide adoption of spintronic devices. Materials such as heavy metals 1 – 3 or topological insulators 4 , 5 provide good charge-to-spin conversion efficiencies. They enable magnetization switching in heterostructures with either metallic ferromagnets or with magnetic insulators. Recent work suggests a pronounced Edelstein effect in Weyl semimetals due to their non-trivial band structure 6 , 7 ; the Edelstein effect can be one order of magnitude stronger than it is in topological insulators or Rashba systems. Furthermore, the strong intrinsic spin Hall effect from the bulk states in Weyl semimetals can contribute to the spin current generation 8 . The Td phase of the Weyl semimetal WTe 2 (WTe 2 hereafter) possesses strong spin–orbit coupling 6 , 9 and non-trivial band structures 10 with a large spin polarization protected by time-reversal symmetry in both the surface and bulk states 9 – 11 . Atomically flat surfaces, which can be produced with high quality 12 , facilitate spintronic device applications. Here, we use WTe 2 as a spin current source in WTe 2 /Ni 81 Fe 19 (Py) heterostructures. We report field-free current-induced magnetization switching at room temperature. A charge current density of ~2.96 × 10 5 A cm −2 suffices to switch the magnetization of the Py layer. With the charge current along the b axis of the WTe 2 layer, the thickness-dependent charge-to-spin conversion efficiency reaches 0.51 at 6–7 GHz. At the WTe 2 /Py interface, a Dzyaloshinskii–Moriya interaction (DMI) with a DMI constant of −1.78 ± 0.06 mJ m −2 induces chiral domain wall tilting. Our study demonstrates the capability of WTe 2 to efficiently manipulate magnetization and sheds light on the role of the interface in Weyl semimetal/magnet heterostructures.

Ultra-efficient magnetism modulation in a Weyl ferromagnet by current-assisted domain wall motion

High-efficiency magnetism modulation of a single Co3Sn2S2 layer directly by current

Magnetism modulation in Co 3 Sn 2 S 2 by current-assisted domain wall motion

Efficient current-induced spin torques and field-free magnetization switching in a room-temperature van der Waals magnet

Magnetic Domain-Wall Motion Twisted by Nanoscale Probe-Induced Spin Transfer

Electric-field control of magnetism in a few-layered van der Waals ferromagnetic semiconductor

Ultralow Electric Current-Assisted Magnetization Switching due to Thermally Engineered Magnetic Anisotropy

Ultra-efficient spin-orbit torque induced magnetic switching in W/CoFeB/MgO structures.

Electric-field control of magnetism in few-layered van der Waals magnet

All-electric Magnetization Switching and Dzyaloshinskii–Moriya Interaction in WTe2/ferromagnet Heterostructures

Ultrafast Domain Wall Motion in Ferrimagnets Induced by Magnetic Anisotropy Gradient

Low Spin Polarization in Heavy-Metal–Ferromagnet Structures Detected Through Domain-Wall Motion by Synchronized Magnetic Field and Current

Energy-Efficient Domain-Wall Motion Governed by the Interplay of Helicity-Dependent Optical Effect and Spin-Orbit Torque

Collinear Spin Current Induced by Artificial Modulation of Interfacial Symmetry

Gigantic current control of coercive field and magnetic memory based on nm-thin ferromagnetic van der Waals Fe3GeTe2

Giant Nonvolatile Manipulation of Magnetoresistance in Magnetic Tunnel Junctions by Electric Fields Via Magnetoelectric Coupling

Modulation of Field-Like Spin Orbit Torque in Heavy Metal/ferromagnet Heterostructures

Effective Electrical Manipulation of a Topological Antiferromagnet by Orbital Torques

Strong Electrical Manipulation of Spin–Orbit Torque in Ferromagnetic Heterostructures

Current Polarity-Dependent Manipulation of Antiferromagnetic Domains