Abstract:The seamless integration of two-dimensional (2D) ferromagnetic materials with similar or dissimilar materials can widen the scope of low-power spintronics. In this regard, a vertical van der Waals (vdW) heterostructure of 2D ferromagnets with semiconducting transition metal dichalcogenides (TMDCs) forms magnetic junctions with exceptional stability and electrical control. Interestingly, 2D metallic Fe3GeTe2 (FGT) reveals above room temperature Curie temperatures and has large magneto anisotropy due to spin-orbit coupling. In addition, it also possesses topological states and a large Berry curvature. Herein, we designed the FGT/WSe2/FGT vdW heterostructure with a uniform and sharp interface so that FGT could maintain its inherent electronic properties. Also, the uniform thickness of the barrier provides a smooth flow of spins through the junctions as tunneling exponentially decays with an increasing barrier thickness. However, strong energy-dependent spin polarization is crucial for achieving optimum spin valve properties, such as large tunneling magnetoresistance (TMR) along with the manipulation of the magnitude and sign reversal. We have observed a shifting of high-energy localized minority spin states toward low-energy regions, which causes spin polarization fluctuation between -42.5% and 41% over a wide range of bias voltage. This leads to a negative TMR% of ∼-100% at 0.1 V Å-1 and also a large positive TMR% at 0.2 V Å-1 and -0.4 V Å-1. Besides, the system exhibits a highly tunable large anomalous Hall conductivity (AHC) of 626 S cm-1. Interestingly, such unprecedented electronic behaviour with large and switchable spin polarization, anomalous Hall conductivity and TMR can be incorporated into MTJ devices, which provide electrical control and long-range spin transport. Additionally, the system emerges as a standout candidate in low-power spintronic devices (e.g., MRAM and magnetic sensors) owing to its distinctive energy-dependent electronic structure with a wide range of external bias.

All-electric Magnetization Switching and Dzyaloshinskii–Moriya Interaction in WTe2/ferromagnet Heterostructures

Facilitating Field-Free Perpendicular Magnetization Switching with a Berry Curvature Dipole in a Weyl Semimetal

Deterministic switching of perpendicular magnetization by out-of-plane anti-damping magnon torques

Room temperature field-free switching of CoFeB/MgO heterostructure based on large-scale few-layer WTe2

Highly Efficient Spin-Orbit Torque Switching in Bi2Se3/Fe3GeTe2 van der Waals Heterostructures

Field-free spin–orbit torque-induced switching of perpendicular magnetization at room temperature in WTe2/ferromagnet heterostructures

Magnetization switching driven by spin-orbit torque of Weyl semimetal WTe<sub<2</sub<

Electric manipulation of the magnetization in heterostructure Pt/Co/Bi2Se3

Tunable Positive to Negative Magnetoresistance in Atomically Thin WTe2

Highly efficient spin-orbit torque generation in bilayer WTe2/Fe3GaTe2 heterostructure

Magnetic Proximity and Nonreciprocal Current Switching in a Monolayer WTe2 Helical Edge

Enhancement of Spin-Orbit Torque in WTe2/perpendicular Magnetic Anisotropy Heterostructures

Unconventional charge-spin conversion in Weyl-semimetal WTe2

Ultra-efficient magnetism modulation in a Weyl ferromagnet by current-assisted domain wall motion

Room temperature field-free switching of perpendicular magnetization through spin-orbit torque originating from low-symmetry type II Weyl semimetal

Magnetization Switching Through Giant Spin–orbit Torque in a Magnetically Doped Topological Insulator Heterostructure

Highly Efficient Room‐Temperature Spin‐Orbit‐Torque Switching in a Van der Waals Heterostructure of Topological Insulator and Ferromagnet

Gate Switchable Spin-Orbit Splitting in a MoTe2/WTe2 Heterostructure from First-Principles Calculations

The role of interfacial Dzyaloshinskii–Moriya interaction in different heavy metal-based perpendicular magnetic systems and its application in spintronic devices

Efficient current-induced spin torques and field-free magnetization switching in a room-temperature van der Waals magnet

Tunable long-range spin transport in a van der Waals Fe3GeTe2/WSe2/Fe3GeTe2 spin valve