Abstract:This review highlights Al1−xScxN as a groundbreaking wurtzite ferroelectric with exceptional properties, including large polarization, tunable coercive field, outstanding thermal stability, and compatibility with CMOS/III‐N technologies. It explores the origins of its ferroelectricity, phase stability, and control mechanisms, discusses challenges such as high operating voltages and leakage currents, and outlines future development directions, emphasizing its potential for advanced applications. Al1−xScxN emerges as a revolutionary ferroelectric material within the III‐N family. It combines exceptional switchable polarization (80–165 μC cm−2), highly tunable coercive fields (1.5–6.5 MV cm−1), and a wide bandgap (4.9–5.6 eV). Unlike conventional ferroelectrics, Al1−xScxN exhibits remarkable compatibility with both CMOS and III‐N technologies. It can be fabricated on plastic substrates at low temperatures, demonstrating excellent flexibility and biocompatibility. Remarkably, Al1−xScxN maintains superior performance in harsh environments due to its outstanding thermal stability (up to 1100 °C). These unique characteristics position Al1−xScxN as a highly promising candidate for a wide range of applications, including high‐performance memory, in‐memory computing, neuromorphic computing, and next‐generation wearable and implantable devices, particularly for operation in complex environments. Despite its potential, Al1−xScxN faces challenges such as high coercive fields, significant leakage currents, and limited polarization reversal cycle life. Addressing these challenges require a deeper understanding of the fundamental physics controlling Al1−xScxN films. This review explores the origins of Al1−xScxN's ferroelectricity and phase stability, delves into the fundamental theory of wurtzite ferroelectricity, investigates mechanisms for controlling spontaneous polarization and coercive fields, examines recent research progress in Al1−xScxN ferroelectric devices, and outlines future development directions for this exciting material.

Ferroelectricity in AlScN: Switching, Imprint and sub-150 nm Films

In-Grain Ferroelectric Switching in Sub-5 nm Thin AlScN Films at 1 V

Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD-Grown Single Crystalline Al$_{0.85}$Sc$_{0.15}$N

AlScN: A III-V semiconductor based ferroelectric

Ultrathin AlScN for low-voltage driven ferroelectric-based devices

Physics of Ferroelectric Wurtzite Al1−xScxN Thin Films

On the exceptional temperature stability of ferroelectric AlScN thin films

The Interplay Between Imprint, Wake-Up Like Effects and Domains in Ferroelectric AlScN

Probing of Polarization Reversal in Ferroelectric (Al,Sc)N Films Using Single‐ and Tri‐Layered Structures With Different Sc/(Al+Sc) Ratio

Fully epitaxial ferroelectric ScAlN grown by molecular beam epitaxy

New-Generation Ferroelectric AlScN Materials

Nanoscale Engineering of Wurtzite Ferroelectrics: Unveiling Phase Transition and Ferroelectric Switching in ScAlN Nanowires

Piezoelectric effect and polarization switching in Al$_{1-x}$Sc$_x$N

Switching it up: New mechanisms revealed in wurtzite-type ferroelectrics

Integration of Ferroelectric Al 0.8 Sc 0.2 N on Si (001) Substrate

Nanoscale Structural and Chemical Properties of Ferroelectric Aluminum Scandium Nitride Thin Films

Domain control and periodic poling of epitaxial ScAlN

Molecular dynamics simulations on ferroelectricity of AlN thin films

Improving Reproducibility of Sputter Deposited Ferroelectric Wurtzite Al0.6Sc0.4N Films using In-situ Optical Emission Spectrometry

Effect of Sc spatial distribution on the electronic and ferroelectric properties of AlScN