Interface-induced field-like optical spin torque in a ferromagnet/heavy metal heterostructure

Satoshi Iihama,Kazuaki Ishibashi,Shigemi Mizukami
DOI: https://doi.org/10.1515/nanoph-2020-0571
2021-02-06
Abstract:The manipulation of magnetization in a metallic ferromagnet by using optical helicity has been much attracted attention for future opto-spintronic devices. The optical helicity induced torques on the magnetization, {\it optical spin torque}, have been observed in ferromagnetic thin films recently. However, the interfacial effect of the optical spin torque in ferromagnet/nonmagnetic heavy metal heterostructures have not been addressed so far, which are widely utilized to efficiently control magnetization via electrical means. Here, we studied optical spin torque vectors in the ferromagnet/nonmagnetic heavy metal heterostructures and observed that in-plane field-like optical spin torque was significantly increased with decreasing ferromagnetic layer thicknesses. The interfacial field-like optical spin torque was explained by the optical Rashba-Edelstein effect caused by the structural inversion symmetry breaking. This work will aid in the efficient optical manipulation of thin film nanomagnets using optical helicity.
Materials Science
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to understand and quantify the spin torque caused by optical chirality (optical helicity) in ferromagnetic/heavy - metal heterostructures, especially the influence of interface effects on this spin torque. Specifically, the research aims to explore the following points: 1. **Mechanism of light - induced spin torque**: The paper focuses on how optical chirality affects magnetization dynamics in heterostructures composed of ferromagnets and non - magnetic heavy metals (such as Pt). Through experimental and theoretical analysis, researchers attempt to reveal the mechanism of action of optical chirality in these materials. 2. **Influence of interface effects**: The research pays special attention to the influence of interface effects on light - induced spin torque. Previous studies have mainly focused on bulk effects or overall material properties, while this paper for the first time studies in detail the influence of interface effects on light - induced spin torque, especially when the ferromagnetic layer is relatively thin. 3. **New interface - induced field - like optical spin torque**: The paper reports a new interface - induced field - like optical spin torque. This torque is caused by the Rashba - Edelstein effect resulting from structural inversion symmetry breaking. This new type of torque has been experimentally verified and its physical mechanism has been explained. 4. **Optimization of ultrafast optical manipulation techniques**: The ultimate goal is to use these findings to optimize ultrafast optical manipulation techniques to achieve effective control of nanomagnets. This will contribute to the development of future optical spintronic devices with ultra - high speed and low energy consumption characteristics. ### Main conclusions - **Experimental observations**: Through experimental measurements of the magnetization dynamic changes caused by optical chirality in FeCo/Pt heterostructures with different thicknesses, significant in - plane field - like optical spin torques were found. - **Theoretical explanations**: Through theoretical models, it is explained that this torque is caused by the Rashba - Edelstein effect, which originates from structural inversion symmetry breaking. - **Potential applications**: This finding provides a new method for efficient optical manipulation of nanomagnets in the future, and has important application prospects especially in the field of ultrafast optical spintronic devices. In summary, this paper solves the problem of understanding the spin torque caused by optical chirality and its interface effects in ferromagnetic/heavy - metal heterostructures, and provides important theoretical and experimental bases for the design of future optical spintronic devices.