Ultrafast, Zero-Bias, Graphene Photodetectors with Polymeric Gate Dielectric on Passive Photonic Waveguides

Vaidotas Mišeikis,Simone Marconi,Marco A. Giambra,Alberto Montanaro,Leonardo Martini,Filippo Fabbri,Sergio Pezzini,Giulia Piccinini,Stiven Forti,Bernat Terrés,Ilya Goykhman,Louiza Hamidouche,Pierre Legagneux,Vito Sorianello,Andrea C. Ferrari,Frank H. L. Koppens,Marco Romagnoli,Camilla Coletti
DOI: https://doi.org/10.1021/acsnano.0c02738
2020-09-11
Abstract:We report compact, scalable, high-performance, waveguide integrated graphene-based photodetectors (GPDs) for telecom and datacom applications, not affected by dark current. To exploit the photothermoelectric (PTE) effect, our devices rely on a graphene-polymer-graphene stack with static top split gates. The polymeric dielectric, poly(vinyl alcohol) (PVA), allows us to preserve graphene quality and to generate a controllable p-n junction. Both graphene layers are fabricated using aligned single-crystal graphene arrays grown by chemical vapor deposition. The use of PVA yields a low charge inhomogeneity 8 x 10$^{10}$ $cm^{-2}$ at the charge neutrality point, and a large Seebeck coefficient 140 ${\mu}$V K$^{-1}$, enhancing the PTE effect. Our devices are the fastest GPDs operating with zero dark current, showing a flat frequency response up to 67 GHz without roll-off. This performance is achieved on a passive, low-cost, photonic platform, and does not rely on nanoscale plasmonic structures. This, combined with scalability and ease of integration, makes our GPDs a promising building block for next-generation optical communication devices.
Applied Physics
What problem does this paper attempt to address?
This paper aims to address the current demands for increased bandwidth, reduced power consumption, and decreased cost in telecommunications networks and data center interconnections. Specifically, the paper proposes a graphene - based photodetector (GPDs), which has the following characteristics: 1. **High Bandwidth**: The graphene photodetectors in the paper operate at zero bias voltage and exhibit a flat frequency response up to 67 GHz without roll - off. This is the highest frequency response among zero - bias photodetectors reported so far. 2. **No Dark Current**: Traditional graphene photodetectors usually need to apply a bias voltage to generate photocurrent, which will lead to a significant dark current (on the order of several milliamperes). However, the photodetectors proposed in this paper achieve zero - bias operation by utilizing the photothermoelectric effect (PTE effect), thus avoiding the noise problems caused by dark current. 3. **Easy Integration and Scalability**: The photodetectors in the paper use a deterministically grown single - crystal graphene array and employ a polymer dielectric layer (polyvinyl alcohol, PVA) as the gate dielectric material. This design not only preserves the quality of graphene but also enables the device to have a high carrier mobility (> 16,000 cm²/Vs) and can be massively integrated on any photon platform, suitable for the application of next - generation optical communication devices. ### Main Technical Contributions - **Material Selection and Preparation**: The single - crystal graphene array prepared by the chemical vapor deposition (CVD) method and polyvinyl alcohol (PVA) as the gate dielectric layer. The selection and preparation methods of these materials ensure the high performance and scalability of the device. - **Utilization of the Photothermoelectric Effect**: By forming a controllable p - n junction in the graphene/polymer/graphene stack structure, efficient photoelectric conversion is achieved by utilizing the photothermoelectric effect (PTE effect). The use of PVA enables the device to operate at zero bias voltage, avoiding the generation of dark current. - **High - Frequency Response**: By optimizing the geometric structure and material properties of the device, a flat frequency response of up to 67 GHz is achieved, which is unprecedented among zero - bias photodetectors. ### Conclusion The paper presents high - performance graphene - based photodetectors that operate at zero bias voltage and have the characteristics of high bandwidth, no dark current, and easy integration. These characteristics make this type of photodetectors a key component in future optical communication systems, especially in application scenarios requiring high bandwidth and low power consumption.