Abstract:Low Gain Avalanche Detectors (LGAD) are based on a n++-p+-p-p++ structure where an appropriate doping of the multiplication layer (p+) leads to high enough electric fields for impact ionization. Gain factors of few tens in charge significantly improve the resolution of timing measurements, particularly for thin detectors, where the timing performance was shown to be limited by Landau fluctuations. The main obstacle for their operation is the decrease of gain with irradiation, attributed to effective acceptor removal in the gain layer. Sets of thin sensors were produced by two different producers on different substrates, with different gain layer doping profiles and thicknesses (45, 50 and 80 um). Their performance in terms of gain/collected charge and leakage current was compared before and after irradiation with neutrons and pions up to the equivalent fluences of 5e15 cm-2. Transient Current Technique and charge collection measurements with LHC speed electronics were employed to characterize the detectors. The thin LGAD sensors were shown to perform much better than sensors of standard thickness (~300 um) and offer larger charge collection with respect to detectors without gain layer for fluences <2e15 cm-2. Larger initial gain prolongs the beneficial performance of LGADs. Pions were found to be more damaging than neutrons at the same equivalent fluence, while no significant difference was found between different producers. At very high fluences and bias voltages the gain appears due to deep acceptors in the bulk, hence also in thin standard detectors.

Radiation effects on NDL prototype LGAD sensors after proton irradiation

Effects of shallow carbon and deep N++ layer on the radiation hardness of IHEP-IME LGAD sensors

Design and testing of LGAD sensor with shallow carbon implantation

Radiation resistant LGAD design

Investigation of low gain avalanche detectors exposed to proton fluences beyond 10$^{15}$ n$_\mathrm{eq}$cm$^{-2}$

Comprehensive technology study of radiation hard LGADs

Investigation of low gain avalanche detectors exposed to proton fluences beyond 10 15 n eq cm -2

Radiation Hardness of Thin Low Gain Avalanche Detectors

Impact of Neutron Irradiation on LGADs with a Carbon-Enriched Shallow Multiplication Layer: Degradation of Timing Performance and Gain

Characterization of the response of IHEP-IME LGAD with shallow carbon to Gamma Irradiation

Overview of CNM LGAD results: Boron Si-on-Si and epitaxial wafers

Gain and time resolution of 45 $μ$m thin Low Gain Avalanche Detectors before and after irradiation up to a fluence of $10^{15}$ n$_{eq}$/cm$^2$

The performance of large-pitch AC-LGAD with different N+ dose

Gain layer degradation study after neutron and proton irradiations in Low Gain Avalanche Diodes

Effect of Proton Irradiation on Extended Wavelength In0.83Ga0.17As Infrared Detector

Characterization of thin carbonated LGADs after irradiation up to 2.5· 10 15 n 1 Mev eq. /cm 2

Low Gain Avalanche Detectors with Good Time Resolution Developed by IHEP and IME for ATLAS HGTD project

Advances in the TCAD modelling of non-irradiated and irradiated Low-Gain Avalanche Diode sensors

A Two-Dimensional Characterization of Low-Gain Avalanche Diodes for Low-LET Microdosimetry

Investigation of Proton Radiation Effect on Indium Gallium Nitride Light Emitting Diodes

Tuning of gain layer doping concentration and Carbon implantation effect on deep gain layer