Abstract:Three-dimensional topological insulators (3D-TIs) possess a specific topological order of electronic bands, resulting in gapless surface states via bulk-edge correspondence. Exotic phenomena have been realized in ferromagnetic TIs, such as the quantum anomalous Hall (QAH) effect with a chiral edge conduction and a quantized value of the Hall resistance ${R_{yx}}$. Here, we report on the emergence of distinct topological phases in paramagnetic Fe-doped (Bi,Sb)${_2}$Se${_3}$ heterostructures with varying structure architecture, doping, and magnetic and electric fields. Starting from a 3D-TI, a two-dimensional insulator appears at layer thicknesses below a critical value, which turns into an Anderson insulator for Fe concentrations sufficiently large to produce localization by magnetic disorder. With applying a magnetic field, a topological transition from the Anderson insulator to the QAH state occurs, which is driven by the formation of an exchange gap owing to a giant Zeeman splitting and reduced magnetic disorder. Topological phase diagram of (Bi,Sb)${_2}$Se${_3}$ allows exploration of intricate interplay of topological protection, magnetic disorder, and exchange splitting.

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to explore how to achieve different topological phase transitions in Fe - doped (Bi, Sb)₂Se₃ heterostructures by changing the structural architecture, doping concentration, and applying external magnetic and electric fields. Specifically, the research focuses on the following points: 1. **Transition from three - dimensional topological insulator (3D - TI) to two - dimensional insulator**: When the film thickness is below a certain critical value, the 3D - TI will transform into a two - dimensional insulator, and with the increase of Fe concentration, it will further transform into an Anderson insulator, which is due to the localization effect caused by magnetic disorder. 2. **Transition from Anderson insulator to quantum anomalous Hall (QAH) state**: By applying a magnetic field, the Anderson insulator can be induced to undergo a topological phase transition and enter the QAH state. This process is driven by the exchange gap formed by the large Zeeman splitting, while reducing the influence of magnetic disorder. 3. **Explore the complex interactions among topological protection, magnetic disorder, and exchange splitting**: By adjusting the Fe doping concentration, layer thickness, and applied magnetic field, study how these factors work together to affect the electronic structure and transport properties of the material. ### Specific problem analysis - **Initial state**: The starting material is a three - dimensional topological insulator (3D - TI), which has a gapless surface state. - **Thickness - dependent phase transition**: When the film thickness is reduced below a certain critical value, due to the hybridization of surface states, the 3D - TI transforms into a two - dimensional insulator. If the Fe doping concentration is high enough, it will lead to magnetic disorder, which will cause the system to further transform into an Anderson insulator. - **Magnetic - field - induced phase transition**: After applying a magnetic field, due to the large Zeeman splitting, the Anderson insulator will undergo a topological phase transition, form an exchange gap, and then enter the QAH state. At this time, the Hall resistance $ R_{yx} $ of the system will show the characteristics of quantization. ### Key formulas - **Anderson insulator condition**: When the hybridization gap $ \Delta_{\text{hy}} $ is greater than the Zeeman splitting $ \Delta_{\text{Zeeman}} $, the system remains as an Anderson insulator: \[ \Delta_{\text{hy}} > \Delta_{\text{Zeeman}} \] - **QAH state condition**: When the Zeeman splitting $ \Delta_{\text{Zeeman}} $ exceeds the hybridization gap $ \Delta_{\text{hy}} $, the system enters the QAH state and forms a non - trivial exchange gap: \[ \Delta_{\text{Zeeman}} > \Delta_{\text{hy}} \] - **Hall resistance quantization**: In the QAH state, the Hall resistance $ R_{yx} $ is close to the quantization value $ h/e^2 $: \[ R_{yx} \approx \frac{h}{e^2} \] Through these studies, the author shows how to use Fe doping and external magnetic fields to achieve multiple topological phase transitions in Bi₂Se₃ - based three - dimensional topological insulators and reveals the physical mechanisms behind these phase transitions.

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