Flexible Floating-Gate Electric-Double-Layer Organic Transistor for Neuromorphic Computing

Chaoyue Zheng,Yuan Liao,Junjie Wang,Ye Zhou,Su-Ting Han

DOI: https://doi.org/10.1021/acsami.2c20925

2022-12-17

Abstract:ACS Appl Mater Interfaces . 2022 Dec 14. doi: 10.1021/acsami.2c20925. Online ahead of print. NO

materials science, multidisciplinary,nanoscience & nanotechnology

What problem does this paper attempt to address?

Carbon Nanotube-Based Flexible Ferroelectric Synaptic Transistors for Neuromorphic Computing

Fan Xia,Tian Xia,Li Xiang,Sujuan Ding,Shuo Li,Yucheng Yin,Meiqi Xi,Chuanhong Jin,Xuelei Liang,Youfan Hu

DOI: https://doi.org/10.1021/acsami.2c07825

IF: 9.5

2022-01-01

ACS Applied Materials & Interfaces

Abstract:Biological nervous systems evolved in nature have marvelous information processing capacities, which have great reference value for modern information technologies. To expand the function of electronic devices with applications in smart health monitoring and treatment, wearable energy-efficient computing, neuroprosthetics, etc., flexible artificial synapses for neuromorphic computing will play a crucial role. Here, carbon nanotube-based ferroelectric synaptic transistors are realized on ultrathin flexible substrates via a low-temperature approach not exceeding 90 degrees C to grow ferroelectric dielectrics in which the single-pulse, pairedpulse, and repetitive-pulse responses testify to well-mimicked plasticity in artificial synapses. The long-term potentiation and long-term depression processes in the device demonstrate a dynamic range as large as 2000x, and 360 distinguishable conductance states are achieved with a weight increase/decrease nonlinearity of no more than 1 by applying stepped identical pulses. The stability of the device is verified by the almost unchanged performance after the device is kept in ambient conditions without additional passivation for 240 days. An artificial neural network-based simulation is conducted to benchmark the hardware performance of the neuromorphic devices in which a pattern recognition accuracy of 95.24% is achieved.
Flexible Organic Electrochemical Transistors for Energy-Efficient Neuromorphic Computing

Li Zhu,Junchen Lin,Yixin Zhu,Jie Wu,Xiang Wan,Huabin Sun,Zhihao Yu,Yong Xu,Cheeleong Tan

DOI: https://doi.org/10.3390/nano14141195

2024-07-12

Abstract:Brain-inspired flexible neuromorphic devices are of great significance for next-generation high-efficiency wearable sensing and computing systems. In this paper, we propose a flexible organic electrochemical transistor using poly[(bithiophene)-alternate-(2,5-di(2-octyldodecyl)- 3,6-di(thienyl)-pyrrolyl pyrrolidone)] (DPPT-TT) as the organic semiconductor and poly(methyl methacrylate) (PMMA)/LiClO4 solid-state electrolyte as the gate dielectric layer. Under gate voltage modulation, an electric double layer (EDL) forms between the dielectric layer and the channel, allowing the device to operate at low voltages. Furthermore, by leveraging the double layer effect and electrochemical doping within the device, we successfully mimic various synaptic behaviors, including excitatory post-synaptic currents (EPSC), paired-pulse facilitation (PPF), high-pass filtering characteristics, transitions from short-term plasticity (STP) to long-term plasticity (LTP), and demonstrate its image recognition and storage capabilities in a 3 × 3 array. Importantly, the device's electrical performance remains stable even after bending, achieving ultra-low-power consumption of 2.08 fJ per synaptic event at -0.001 V. This research may contribute to the development of ultra-low-power neuromorphic computing, biomimetic robotics, and artificial intelligence.
Artificial Synapses Based on Lead-Free Perovskite Floating-Gate Organic Field-Effect Transistors for Supervised and Unsupervised Learning

Ruizhi Wang,Pengyue Chen,Dandan Hao,Junyao Zhang,Qianqian Shi,Dapeng Liu,Li,Lize Xiong,Junhe Zhou,Jia Huang

DOI: https://doi.org/10.1021/acsami.1c08424

IF: 9.5

2021-01-01

ACS Applied Materials & Interfaces

Abstract:Synaptic devices are expected to overcome von Neumann's bottleneck and served as one of the foundations for future neuromorphic computing. Lead halide perovskites are considered as promising photoactive materials but limited by the toxicity of lead. Herein, lead-free perovskite CsBi3I10 is utilized as a photoactive material to fabricate organic synaptic transistors with a floating-gate structure for the first time. The devices can maintain the Ilight/Idark ratio of 103 for 4 h and have excellent stability within the 30 days test even without encapsulation. Synaptic functions are successfully simulated. Notably, by combining the decent charge transport property of the organic semiconductor and the excellent photoelectronic property of CsBi3I10, synaptic performance can be realized even with an operating voltage as low as -0.01 V, which is rare among floating-gate synaptic transistors. Furthermore, artificial neural networks are constructed. We propose a new method that can simulate the synaptic weight value in multiple digit form to achieve complete gradient descent. The image recognition test exhibits thrilling recognition accuracy for both supervised (91%) and unsupervised (81%) classifications. These results demonstrate the great potential of floating-gate organic synaptic transistors in neuromorphic computing.
Flexible Metal Oxide/Graphene Oxide Hybrid Neuromorphic Transistors on Flexible Conducting Graphene Substrates

Chang Jin Wan,Yang Hui Liu,Ping Feng,Wei Wang,Li Qiang Zhu,Zhao Ping Liu,Yi Shi,Qing Wan

DOI: https://doi.org/10.1002/adma.201600820

IF: 29.4

2016-01-01

Advanced Materials

Abstract:Flexible metal oxide/graphene oxide hybrid multi-gate neuromorphic transistors are fabricated on flexible conducting graphene substrates. Dendritic integrations in both spatial and temporal modes are emulated, and spatiotemporal correlated logics are obtained. A proof-of-principle visual system model for emulating Lobula Giant Motion Detector neuron is also investigated. The results are of great significance for flexible sensors and neuromorphic cognitive systems.
Exploring Neuromorphic Computing with Double-Gate Floating Device Based on Van Der Waals Heterostructures

Advaita Ghosh,Yen-Fu Lin,Shu-Ping Lin

DOI: https://doi.org/10.1149/ma2024-01331651mtgabs

2024-08-09

ECS Meeting Abstracts

Abstract:Neuromorphic devices represent a frontier in technological development, aiming to emulate the intricate parallel functionalities inherent to the human brain [1, 2]. Traditional computing models, such as Von Neumann architecture, grapple with limitations in parallel processing, prompting the exploration of neuromorphic computing to integrate memory and processing efficiently. Our research presents the double gate floating device based on Vander Waals heterostructure (DG-VH-FET), employing molybdenum disulfide (MoS 2 ), hexagonal boron nitride (h-BN), and graphene (Gr) as key components. These devices, based on 2D materials, enable independent modulation of channel doping through electrostatic means [3]. In this study, we initially assessed the fundamental characteristics of the floating gate, including transfer characteristics, output characteristics, retention, and endurance. By applying constant drain-to-source voltages (V DS ) while introducing variations in the back gate voltage (V BG ) sweeping range, the memory window of the transfer characteristics changes. Conversely, maintaining a constant V BG and V DS while varying the top gate voltage (V TG ) solely results in a shift in the threshold voltage of the memory window. This is attributed to the crucial role of V BG in charge trapping in the floating gate layer, with the influence of V TG on charge trapping being negligible due to the screening effect of MoS 2 [4]. Moreover, by using V TG and V BG this study shows that DG-VH-FET could have potential applications in exploring and understanding various neurological effects, thereby bridging the gap between electronics and biology. Figure 1
An Organic Flexible Artificial Bio-Synapses with Long-Term Plasticity for Neuromorphic Computing.

Tian-Yu Wang,Zhen-Yu He,Lin Chen,Hao Zhu,Qing-Qing Sun,Shi-Jin Ding,Peng Zhou,David Wei Zhang

DOI: https://doi.org/10.3390/mi9050239

IF: 3.4

2018-01-01

Micromachines

Abstract:Artificial synapses, with synaptic plasticity, are the key components of constructing the neuromorphic computing system and mimicking the bio-synaptic function. Traditional synaptic devices are based on silicon and inorganic materials, while organic electronics can open up new opportunities for flexible devices. Here, a flexible artificial synaptic device with an organic functional layer was proposed. The organic device showed good switching behaviors such as ON/OFF ratio over 100 at low operation voltages. The set and reset voltages were lower than 0.5 V and −0.25 V, respectively. The long-term plasticity, spike-timing-dependent plasticity learning rules (STDP), and forgetting function were emulated using the device. The retention times of the excitatory and inhibitory post-synaptic currents were both longer than 60 s. The long-term plasticity was repeatable without noticeable degradation after the application of five voltage pulse cycles to the top electrode. These results indicate that our organic flexible device has the potential to be applied in bio-inspired neuromorphic systems.
Flexible Low‐Voltage MXene Floating‐Gate Synaptic Transistor for Neuromorphic Computing and Cognitive Learning

Jiahao Zhu,Zifan Wang,Dexing Liu,Qi Liu,Wanting Wang,Xinwei Wang,Min Zhang

DOI: https://doi.org/10.1002/adfm.202403842

IF: 19

2024-05-24

Advanced Functional Materials

Abstract:A novel flexible synaptic transistor based on MXene floating gates is proposed, which can emulate various synaptic plasticity phenomena. The device exhibits excellent mechanical flexibility and operates at low voltages, enhancing its suitability for wearable applications. It can mimic Pavlovian conditioning under stress and achieve high accuracy in handwritten digit recognition using an FCNN model. Neuromorphic computing, inspired by the functionality of biological neural networks, has emerged as a promising paradigm for artificial intelligence applications, especially in the field of flexible electronics. Among the various artificial synaptic devices, floating‐gate synaptic transistors exhibit long‐term synaptic plasticity, but they face the challenge of achieving flexible compatibility. In this work, the first demonstration of a flexible MXene floating‐gate synaptic transistor is reported, which uses multiple layers of MXene as floating gates and MXene nanosheets as charge state modulators. The device shows excellent mechanical flexibility and can operate at low voltages, which improves its suitability for wearable electronic devices. It can also emulate Pavlovian conditioned reflexes under external stress, suggesting its potential for cognitive learning. Moreover, the device is utilized for handwritten digit recognition by simulating a fully connected neural network, achieving a high recognition accuracy of 92.0%. This demonstrates its practical applicability in neuromorphic computing. Besides, this research achieves the patterning of MXene and its application in flexible floating‐gate transistors. It provides a new solution for the integrated fabrication of flexible artificial synaptic devices.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Flexible Oxide-Based Schottky Neuromorphic TFTs with Configurable Spiking Dynamic Functions

Yongli He,Ying Zhu,Chunsheng Chen,Rui Liu,Shanshan Jiang,Li Zhu,Yi Shi,Qing Wan

DOI: https://doi.org/10.1109/ted.2020.3022814

IF: 3.1

2020-01-01

IEEE Transactions on Electron Devices

Abstract:Capacitively coupled neuromorphic system is very promising for spiking dynamic computing because of the inherent advantages of low static power and large fan-out. Here, flexible multigate indium-gallium-zinc-oxide (IGZO) Schottky thin-film transistors (TFTs) with configurable neuromorphic functions are investigated. The channel layer can be effectively modulated by the multigate terminals through electric-double-layer coupling effect. Plastic modulation of Schottky barrier is also demonstrated, which is highly desirable for dynamic synaptic weight modulation. Furthermore, configurable spiking dynamic functions, such as paired-pulse facilitation (PPF) and high-frequency spike filter, are also emulated in such flexible oxide-based Schottky neuromorphic device.
IGZO-based floating-gate synaptic transistors for neuromorphic computing

Yongli He,Rui Liu,Shanshan Jiang,Chunsheng Chen,Li Zhu,Yi Shi,Qing Wan

DOI: https://doi.org/10.1088/1361-6463/ab7bb4

2020-03-26

Abstract:Neuromorphic computing, that is expected to be implemented with emerging synaptic devices, mayovercome the inherent efficiency bottleneck in conventional digital computers. In this article,low-temperature processed indium-gallium-zinc-oxide (FGST) based floating-gate synaptic transistorswith Al 2 O 3 /ITO/Al 2 O 3 gate dielectric stacks are proposed for neuromorphic computing. Thesynaptic weight is stored as the channel conductance ( G ) of the floating-gate synaptic transistor(FGST). Negative/positive electrical pulse stimuli are applied on the bottom gate electrode of thesynaptic transistor to facilitate/depress the synaptic weight, respectively. The operation mechanismof such neuromorphic devices is discussed based on the electron direct tunneling. Furthermore, theretention of the synaptic weight and the device endurance characteristics of the synaptictransistors are also investigated. In addition, in simulations with the mea...
Flexibly Photo-Regulated Brain-Inspired Functions in Flexible Neuromorphic Transistors

Laiyuan Wang,Tao Zhang,Junhao Shen,Jin Huang,Wen Li,Wei Shi,Wei Huang,Mingdong Yi

DOI: https://doi.org/10.1021/acsami.2c22754

IF: 9.5

2023-03-02

ACS Applied Materials & Interfaces

Abstract:As an attractive prototype for neuromorphic computing, the difficultly attained three-terminal platforms have specific advantages in implementing the brain-inspired functions. Also, in these devices, the most utilized mechanisms are confined to the electrical gate-controlled ionic migrations, which are sensitive to the device defects and stoichiometric ratio. The resultant memristive responses have fluctuant characteristics, which have adverse influences on the neural emulations. Herein, we...

materials science, multidisciplinary,nanoscience & nanotechnology
Dual-gate IGZO-based Neuromorphic Transistors with Stacked Al2O3/Chitosan Gate Dielectrics

Wang Jingyu,Wan Changjin,Wan Qing

DOI: https://doi.org/10.15541/jim20220767

2023-01-01

Abstract:Indium-gallium-zinc-oxide (IGZO)-based electric-double-layer (EDL) transistors have great applications for neuromorphic perception and computing systems because of their low processing temperature, high homogeneity, and plentiful ionic dynamics. However, IGZO-based EDL transistors have problems of high leakage current (>10 nA), high energy consumption and abnormal current spikes, which are the main obstacles to the development of neuromorphic computing systems based on such devices. In this work, a novel IGZO neuromorphic transistor with Al2O3/chitosan stacked gate dielectric was proposed. Compared with the monolayer chitosan gate dielectric transistor, the device with Al2O3/chitosan layer showed low subthreshold swing of 78.3 mV/decade, a low gate leakage current of 1.3 nA (reduced by about 98%), a large hysteresis window of 3.73 V (increased by about 3.4 times), a low excitable postsynaptic current of 0.86 nA (decreased by about 97%) and an energy consumption of 1.7 pJ for a spike event (0.5 V, 20 ms). Additionally, the emulation of spiking synaptic function and the synergistically modulation of the channel current were also realized, and the abnormal current spike caused by high leakage in synaptic plasticity simulation was also effectively avoided. The results suggest that the inserting of high-k dielectric layer can effectively improve the leakage current, energy consumption and performance of neuromorphic devices, which has substantial value for future ultra-low energy consumption neuromorphic perception and computing systems.
Freestanding multi-gate IZO-based neuromorphic transistors on composite electrolyte membranes

Xiangjing Wang,Li Zhu,Chunsheng Chen,Huiwu Mao,Yixin Zhu,Ying Zhu,Yang Yang,Changjin Wan,Qing Wan

DOI: https://doi.org/10.1088/2058-8585/ac4203

IF: 3.1

2021-12-01

Flexible and Printed Electronics

Abstract:Abstract Brain-inspired neuromorphic computing would bring a breakthrough to the classical computing paradigm through its massive parallelism and potential low power consumption advantages. Introduction of flexibility may bring vitality to this area by expanding its application areas to such as wearable and implantable electronics. At present, the development of flexible neuromorphic devices makes it a choice with wide prospect for next-generation wearable artificial neuromorphic computing. In this study, a freestanding graphene oxide/polyvinyl alcohol composite solid electrolyte membrane is utilized as the gate dielectric and support material, and indium-zinc-oxide (IZO) neuromorphic transistors are fabricated on such membrane. Based on the in-plane gate modulation, many key synaptic plasticity behaviors have been successfully emulated, including excitatory postsynaptic current, paired-pulse facilitation, high-pass filtering, and spatiotemporal signal processing. Moreover, transition of the spiking logic and the superlinear and sublinear dendritic integration function are realized. Our results indicate that these freestanding IZO-based neuromorphic transistors may of great significance for future flexible anthropomorphic robots, wearable bionic perception.

materials science, multidisciplinary
Organic Optoelectronic Synaptic Devices for Energy-Efficient Neuromorphic Computing

Qingxuan Li,Tianyu Wang,Xuemeng Hu,Xiaohan Wu,Hao Zhu,Li Ji,Qingqing Sun,David Wei Zhang,Lin Chen

DOI: https://doi.org/10.1109/led.2022.3180346

IF: 4.8157

2022-01-01

IEEE Electron Device Letters

Abstract:Organic materials with good biocompatibility and mechanical flexibility have great application potential in photonic neuromorphic computing. Here, the organic optoelectronic synapse for neuromorphic computing is fabricated on a flexible substrate. The excellent ferroelectricity of poly(vinylidene fluoride-trifluoroethylene) P(VDF-TrFE) endows the device with a memory window larger than 18 V and stable conductance modulation. The excellent photosensitive properties of 2,7-dioctyl[1] benzothieno[3,2-b][1]benzothiophene (C8-BTBT) enable the device to operate at an extremely low voltage of 0.25uV and achieve an ultralow energy consumption of 0.35fJ per event. In addition, under photoelectric dual modulation, the proposed synaptic devices can realize the simulation of biological synaptic behaviors, such as excitatory post-synaptic current (EPSC), long-term potentiation /depression (LTP/LTD). The neuromorphic computing function was verified using pattern recognition, with a recognition rate of up to 90.6% for handwritten digits. This research provides an effective way for the development of multifunctional artificial synaptic devices and artificial neural network systems.
Flexible Organic Field-Effect Transistor Arrays For Wearable Neuromorphic Device Applications

Qing-Xuan Li,Tian-Yu Wang,Xiao-Lin Wang,Lin Chen,Hao Zhu,Xiao-Han Wu,Qing-Qing Sun,David Wei Zhang

DOI: https://doi.org/10.1039/d0nr06478e

IF: 6.7

2020-01-01

Nanoscale

Abstract:With the advent of wearable microelectronic devices in the interdisciplinary bio-electronics research field, synaptic devices with capability of neuromorphic computing are attracting more and more attention as the building blocks for the next generation computing structure. Conventional flash-like synaptic transistors are built on rigid solid-state substrates, and the inorganic materials and the high-temperature processing steps have severely limited their applications in various flexible electronic devices and systems. Here, flexible organic flash-like synaptic devices have been fabricated on a flexible substrate with the organic C8-BTBT as the conducting channel. The device exhibits a memory window greater than 20 V and excellent synaptic functions including short/long-term synaptic plasticity and spike-timing-dependent plasticity. In addition, even under the bending condition (7 mm bending radius), the transistor can still stably achieve a variety of synaptic functions. This work shows that low-temperature processing technology with the integration of organic materials can pave a promising pathway for the realization of flexible synaptic systems and the future development of wearable electronic devices.
Flexible Metal Oxide/Graphene Oxide Hybrid Neuromorphic Devices on Flexible Conducting Graphene Substrates

Chang Jin Wan,Wei Wang,Li Qiang Zhu,Yang Hui Liu,Ping Feng,Zhao Ping Liu,Yi Shi,Qing Wan

DOI: https://doi.org/10.48550/arXiv.1609.00032

2016-03-07

Neurons and Cognition

Abstract:Flexible metal oxide/graphene oxide hybrid multi-gate neuron transistors were fabricated on flexible graphene substrates. Dendritic integrations in both spatial and temporal modes were successfully emulated, and spatiotemporal correlated logics were obtained. A proof-of-principle visual system model for emulating lobula giant motion detector neuron was investigated. Our results are of great interest for flexible neuromorphic cognitive systems.
Flexible Dual-Gate MoS₂ Neuromorphic Transistors on Freestanding Proton-Conducting Chitosan Membranes

Chunsheng Chen,Yongli He,Li Zhu,Ying Zhu,Yi Shi,Qing Wan

DOI: https://doi.org/10.1109/ted.2021.3076138

2021-01-01

Abstract:Flexible neuromorphic devices are highly desirable for emerging perception and sensing systems. Here, multiterminal neuromorphic devices based on freestanding dual-gate MoS2 transistors on freestanding proton-conducting chitosan membranes are proposed. The chitosan membranes are simultaneously used as the dielectrics and substrates. By replicating the surface of silicon substrate, the roughness of chitosan substrate is successfully reduced from 11 to 1.7 nm. Besides, the membranes show a large specific in-plane electric-double-layer capacitance of 1.3 mu F/cm(2) at 1.0 Hz when the interelectrode space is 100 mu m. The dual-gate MoS2 transistors exhibit high mechanical stability and electrical performance on flexible chitosan membranes. Some important synaptic functions, such as paired-pulse facilitation, and tunable high pass filter, are successfully emulated. Furthermore, spatiotemporal dynamic correlation is also experimentally demonstrated. Our results will greatly enrich the intension of 2-D flexible electronics and neuromorphic perception and sensing systems.
Flexible Organic Optoelectronic Devices for Neuromorphic Computing

Xuemeng Hu,Jialin Meng,Qingxuan Li,Tianyu Wang,Hao Zhu,Qingqing Sun,David Wei Zhang,Lin Chen

DOI: https://doi.org/10.1109/led.2023.3274825

IF: 4.8157

2023-01-01

IEEE Electron Device Letters

Abstract:With the demand of wearable device in the field of flexible electronic, synaptic devices with capability of neuromorphic computing are attracting increasing attention. In this paper, an organic flexible device with excellent synaptic behaviors was fabricated on MICA substrate, which has a memory window more than 20V. Furthermore, the device simulates organism synaptic behaviors successfully, such as paired-pulse facilitation (PPF), long-term potentiation/depression (LTP/LTD) process and transition from short-term memory (STM) to long-term memory (LTM) by optical and electrical modulation. Importantly, after repeated bending, the electrical characteristics of the device maintains stable and can still obtain synaptic behaviors by electrical and optical pulses. The proposal of the device provides the possibility of applications for wearable artificial synapses.
All‐Photolithography Fabrication of Ion‐Gated Flexible Organic Transistor array for Multimode Neuromorphic Computing

Xu Liu,Shilei Dai,Weidong Zhao,Junyao Zhang,Ziyi Guo,Yue Wu,Yutong Xu,Tongrui Sun,Li Li,Pu Guo,Jie Yang,Huawei Hu,Junhe Zhou,Peng Zhou,Jia Huang

DOI: https://doi.org/10.1002/adma.202312473

IF: 29.4

2024-02-23

Advanced Materials

Abstract:Organic ion‐gated transistors (OIGTs) demonstrate commendable performance for versatile neuromorphic systems. However, due to the fragility of organic materials to organic solvents, efficient and reliable all‐photolithography methods for scalable manufacturing of high‐density OIGT arrays with multimode neuromorphic functions are still missing, especially when all active layers are patterned in high‐density. Here, we fabricated a flexible high‐density (9662 devices/cm2) OIGT array with high yield and minimal device‐to‐device variation by a modified all‐photolithography method. The unencapsulated flexible array can withstand 1000 times' bending at a radius of 1 mm, and 3 months' storage test in air, without obvious performance degradation. More interesting, the OIGTs can be configured between volatile and nonvolatile modes, suitable for constructing reservoir computing systems to achieve high accuracy in classifying handwritten digits with low training costs. This work proposes a promising design of organic and flexible electronics for affordable neuromorphic systems, encompassing both array and algorithm aspects. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
A high endurance, temperature-resilient, and robust organic electrochemical transistor for neuromorphic circuits

Songjia Han,Shunlin Yu,Sujuan Hu,Hui-jiuan Chen,Jin Wu,Chuan Liu

DOI: https://doi.org/10.1039/d1tc02215f

IF: 6.4

2021-01-01

Journal of Materials Chemistry C

Abstract:A novel organic electrochemical transistor is proposed by adopting a dual-network hydrogel as the electrolyte.

materials science, multidisciplinary,physics, applied
Flexible electronic synapse enabled by ferroelectric field effect transistor for robust neuromorphic computing

Gaokuo Zhong,Mengfei Zi,Chuanlai Ren,Qun Xiao,Mingkai Tang,Liyu Wei,Feng An,Shuhong Xie,Jinbin Wang,Xiangli Zhong,Mingqiang Huang,Jiangyu Li

DOI: https://doi.org/10.1063/5.0013638

IF: 4

2020-08-31

Applied Physics Letters

Abstract:Neuromorphic computing has the potential to accelerate high performance parallel and low power in-memory computation, artificial intelligence, and adaptive learning. Despite emulating the basic functions of biological synapses well, the existing artificial electronic synaptic devices have yet to match the softness, robustness, and ultralow power consumption of the brain. Here, we demonstrate an all-inorganic flexible artificial synapse enabled by a ferroelectric field effect transistor based on mica. The device not only exhibits excellent electrical pulse modulated conductance updating for synaptic functions but also shows remarkable mechanical flexibility and high temperature reliability, making robust neuromorphic computation possible under external disturbances such as stress and heating. Based on its linear, repeatable, and stable long-term plasticity, we simulate an artificial neural network for the Modified National Institute of Standards and Technology handwritten digit recognition with an accuracy of 94.4%. This work provides a promising way to enable flexible, low-power, robust, and highly efficient neuromorphic computation that mimics the brain.

physics, applied

Flexible Floating-Gate Electric-Double-Layer Organic Transistor for Neuromorphic Computing

Carbon Nanotube-Based Flexible Ferroelectric Synaptic Transistors for Neuromorphic Computing

Flexible Organic Electrochemical Transistors for Energy-Efficient Neuromorphic Computing

Artificial Synapses Based on Lead-Free Perovskite Floating-Gate Organic Field-Effect Transistors for Supervised and Unsupervised Learning

Flexible Metal Oxide/Graphene Oxide Hybrid Neuromorphic Transistors on Flexible Conducting Graphene Substrates

Exploring Neuromorphic Computing with Double-Gate Floating Device Based on Van Der Waals Heterostructures

An Organic Flexible Artificial Bio-Synapses with Long-Term Plasticity for Neuromorphic Computing.

Flexible Low‐Voltage MXene Floating‐Gate Synaptic Transistor for Neuromorphic Computing and Cognitive Learning

Flexible Oxide-Based Schottky Neuromorphic TFTs with Configurable Spiking Dynamic Functions

IGZO-based floating-gate synaptic transistors for neuromorphic computing

Flexibly Photo-Regulated Brain-Inspired Functions in Flexible Neuromorphic Transistors

Dual-gate IGZO-based Neuromorphic Transistors with Stacked Al2O3/Chitosan Gate Dielectrics

Freestanding multi-gate IZO-based neuromorphic transistors on composite electrolyte membranes

Organic Optoelectronic Synaptic Devices for Energy-Efficient Neuromorphic Computing

Flexible Organic Field-Effect Transistor Arrays For Wearable Neuromorphic Device Applications

Flexible Metal Oxide/Graphene Oxide Hybrid Neuromorphic Devices on Flexible Conducting Graphene Substrates

Flexible Dual-Gate MoS₂ Neuromorphic Transistors on Freestanding Proton-Conducting Chitosan Membranes

Flexible Organic Optoelectronic Devices for Neuromorphic Computing

All‐Photolithography Fabrication of Ion‐Gated Flexible Organic Transistor array for Multimode Neuromorphic Computing

A high endurance, temperature-resilient, and robust organic electrochemical transistor for neuromorphic circuits

Flexible electronic synapse enabled by ferroelectric field effect transistor for robust neuromorphic computing