Abstract:A broadband photodetector with high performance is highly desirable for the optoelectric and sensing application. Herein, we report a "photo-thermo-electric" (PTE) detector based on an ultrathin SnTe film. The (001)-oriented SnTe films with the wafer size scale are epitaxially grown on the surface of sodium chloride crystals by a scalable sputtering method. Due to the giant PTE effect under laser spot excitation on the asymmetric position between two terminals, a built-in electrical field is produced to drive bulk carriers for a self-powered photodetector, leading to a broad spectral response in the wavelength range from 404 nm to 10.6 μm far beyond the limitation of the energy band gap. Significantly, the photodetector displays a high on/off photoswitching ratio of over 105 with a suppressed dark current, which is 4–5 orders of magnitude higher than that of other reported SnTe-based detectors. Under zero external bias, the device yields the highest detectivity of ∼1.3 × 1010 cm Hz1/2 W–1 with a corresponding responsivity of ∼3.9 mA W–1 and short rising/falling times of ∼78/84 ms. Furthermore, the photodetector transferred onto the flexible template exhibits excellent mechanical flexibility over 300 bending cycles. These findings offer feasible strategies toward designing and developing low-power-consumption wearable optoelectronics with competitive performance.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c15639?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c15639</a>.Digital image of scalable sputtering growth process of SnTe film on a NaCl substrate; TEM images and SAED images; AFM image of the SnTe and the corresponding height profile; absorption spectrum of the SnTe film; dynamic photoresponse curves measured after different months; dynamic photoresponse curves measured under environmental and vacuum condition, respectively; J–V curves and dynamic response curves illuminated by 2000 nm wavelength laser with different power intensities; J–V curves and dynamic response curves illuminated by 10.6 μm wavelength laser with different power intensities; noise spectrum of the device; and photocurrent of the fabricated flexible SnTe detector under different bending radii (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c15639/suppl_file/am0c15639_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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