Abstract:Triboelectric nanogenerators (TENGs) are an emerging energy harvesting technology able to convert ubiquitous mechanical energy into electricity. Friction, static charging and flexoelectricity are all involved in the mechanism underpinning TENG operation, but their relative contribution has remained elusive. Here we used dynamic and static conductive atomic force microscopy (C-AFM) measurements on monolayer-modified silicon crystals to detect evidence of a relationship between friction and zero-bias current, and between pressure and the direction of the putative flexovoltage. We demonstrate that a static electricity-related tribovoltage is probably responsible for a friction excess, and that surprisingly this friction excess is found to be dependent on the doping level and type of the silicon substrate. Such friction excess is however no longer measurable once current is allowed to flow across the junction. This observation points to an electrostatic origin of friction in silicon-based Schottky TENGs, and suggests that the zero external bias DC current is at least in part an electronic flow to neutralize static charges. Further, the sign of the zero-bias current, but not its magnitude, is independent of the semiconductor doping type, which is again suggestive of surface statics being a main contributor to the zero-bias output rather than exclusively a space-charge effect. We also reveal the presence of a junction flexovoltage under pressures common in AFM experiments (GPa), even for negligible lateral friction. In a static Pt–monolayer–n-type Si junction the flexovoltage carries the same sign as the tribovoltage, and can reach such magnitude to overwrite external voltages as high as 2 V. The immediate implication is that the flexovoltage is likely to have i) a strong contribution to the zero-bias output of a n-Si Schottky TENG, ii) a negative effect on the output of a p-Si TENG, and iii) its detection can be straightforward, as we discovered that flexoelectricity manifests as an "inverted diode": a n-type Si–platinum diode with negligible current even when the n-type material is negatively biased as long as the "static" diode remains under a large normal pressure.

Friction-Dominated Carrier Excitation and Transport Mechanism for GaN-Based Direct-Current Triboelectric Nanogenerators

A High Strength Triboelectric Nanogenerator Based on Rigid-Flexible Coupling Design for Energy Storage System

Tribovoltaic Effect on Metal–Semiconductor Interface for Direct‐Current Low‐Impedance Triboelectric Nanogenerators

Sliding-mode Triboelectric Nanogenerator Based on Paper and As a Self-Powered Velocity and Force Sensor

p-n Junction Based Direct-Current Triboelectric Nanogenerator by Conjunction of Tribovoltaic Effect and Photovoltaic Effect

Direct Current Triboelectric Nanogenerator Based on Contact Electrification, Air Breakdown, Electrostatic Induction, and Charge Leakage for Self‐powered Applications

Enhanced performance of Cu/P-type GaN triboelectric nanogenerator through heterojunction

Friction Force Excitation Effect on the Sliding-mode Triboelectric Nanogenerator

Tribological-behaviour-controlled direct-current triboelectric nanogenerator based on the tribovoltaic effect under high contact pressure

On the Contact Electrification Mechanism in Semiconductor-Semiconductor Case by Vertical Contact-Separation Triboelectric Nanogenerator

Tribovoltaic Effect Promotes Highly Efficient Direct-Current Generator

Pursuing Tribovoltaic Effect for Direct-Current Triboelectric Nanogenerator

Sliding mode direct current triboelectric nanogenerators

Overall performance improvement of direct-current triboelectric nanogenerator by charge leakage and ternary dielectric evaluation

Boosting output performance of contact-separation mode triboelectric nanogenerators by adopting discontinuity and fringing effect: experiment and modelling studies

A Dual-Functional Triboelectric Nanogenerator Based on the Comprehensive Integration and Synergetic Utilization of Triboelectrification, Electrostatic Induction, and Electrostatic Discharge to Achieve Alternating Current/Direct Current Convertible Outputs

Direct-current output of silicon–organic monolayer–platinum Schottky TENGs: Elusive friction-output relationship

Durable Flexible Direct Current Generation through the Tribovoltaic Effect at Contact-Separation Mode

Metal‐Gallium Arsenide Based Tribovoltaic Nanogenerators and its Application for High‐Precision Self‐Powered Displacement Sensors

All‐Fabric Direct‐Current Triboelectric Nanogenerators Based on the Tribovoltaic Effect as Power Textiles

Study of interfacial design for direct-current tribovoltaic generators